MG400Q1US41

The MG400Q1US41 is designed as one kind of TOSHIBA GTR module silicon channel IGBTs with typical applications of high power switching applications, motor control applications.

MG400Q1US41 has five features. (1)High input impedance. (2)High speed tf=0.5us max and trr=0.5us max. (3)Low saturation voltage Vce(sat)=4.0V max. (4)Enhancement mode. (5)The electrodes are isolated from case. Those are all the main features.

Some absolute maximum ratings of MG400Q1US41 have been concluded into several points as follow. (1)Its collector to emitter voltage would be 1200V. (2)Its gate to emitter voltage would be +/-20V. (3)Its collector current would be 400A for DC and would be 800A for pulse 1ms. (4)Its forward current would be 400A for DC and would be 800A for pulse 1ms. (5)Its collector power dissipation would be 2400W. (6)Its junction temperature would be 150°C. (7)Its storage temperature range would be from -40°C to 125°C. (8)Its isolation voltage would be 2500 (AC 1 minute) V. (9)Its screw torque (terminal: M4/M6/mounting) would be 2/3/3Nm. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of MG400Q1US41 are concluded as follow. (1)Its gate leakage current would be max +/-40uA. (2)Its collector cutoff-current would be max 4mA. (3)Its gate-emitter cut-off voltage would be min 3.0V and max 6.0V. (4)Its collector to emitter saturation voltage would be typ 3.0V and max 4.0V. (5)Its input capacitance would be typ 48000pF. (6)Its switching time rise time would be typ 0.3us and max 0.6us. (7)Its turn-on time would be typ 0.4us and max 0.8us. (8)Its fall time would be typ 0.2us and max 0.5us. (9)Its turn-off time would be typ 0.8us and max 1.5us. (10)Its forward voltage would be typ 2.0V and max 3.0V. (11)Its reverse recovery time would be typ 0.25us and max 0.5us. And so on. If you have any question or suggestion or want to know more information about MG400Q1US41 please contact us for details. Thank you!