MD5764802

Features: • Compatible with Base RDRAMs• 600 MB/s peak transfer rate per RDRAM• Rambus Signaling Level (RSL) interface• Synchronous, concurrent protocol for block-oriented, interleaved (overlapped) transfers• 480 MB/s effective bandwidth for random 32 byte transfers f...

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SeekIC No. : 004418863 Detail

MD5764802: Features: • Compatible with Base RDRAMs• 600 MB/s peak transfer rate per RDRAM• Rambus Signaling Level (RSL) interface• Synchronous, concurrent protocol for block-oriented, i...

floor Price/Ceiling Price

Part Number:
MD5764802
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Compatible with Base RDRAMs
• 600 MB/s peak transfer rate per RDRAM
• Rambus Signaling Level (RSL) interface
• Synchronous, concurrent protocol for block-oriented, interleaved (overlapped) transfers
• 480 MB/s effective bandwidth for random 32 byte transfers from one RDRAM
• 13 active signals require just 32 total pins on the controller interface (including power)
• 3.3 V operation
• Additional/multiple Rambus Channels each provide an additional 600 MB/s bandwidth
• Two or four 2KByte sense amplifiers may be operated as caches for low latency access
• Random access mode enables any burst order at full bandwidth within a page
• Graphics features include write-per-bit and mask-per-bit operations
• Available in horizontal surface mount plastic package (SHP32-P-1125-0.65-K)



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Min.
Max.
Unit
V I,ABS
Voltage applied to any RSL pin with respect to Gnd
0.3
V DD,MAX+0.3
V
V I,CMOS,ABS
Voltage applied to any CMOS pin with respect to Gnd
0.3
V DD+0.3
V
V DD,ABS
Voltage on VDD with respect to Gnd
0.3
VDD,MAX+1.0
V
T J,ABS
Junction temperature under bias
55
125
°C
T STORE
Storage temperature
55
125
°C



Description

The 18/64-Megabit Concurrent Rambus™ DRAMs (RDRAM®) MD5764802 are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes). The use of Rambus Signaling Level (RSL) technology permits 600 MHz transfer rates while using conventional system and board design methodologies. Low effective latency is attained by operating the two or four 2KB sense amplifiers as high speed caches, and by using random access mode (page mode) to facilitate large block transfers. Concurrent (simultaneous) bank operations permit high effective bandwidth using interleaved transactions.

MD5764802 RDRAMs are general purpose high-performance memory devices suitable for use in a broad range of applications including PC and consumer main memory, graphics, video, and any other application where high-performance at low cost is required.




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