Features: • Compatible with Base RDRAMs• 600 MB/s peak transfer rate per RDRAM• Rambus Signaling Level (RSL) interface• Synchronous, concurrent protocol for block-oriented, interleaved (overlapped) transfers• 480 MB/s effective bandwidth for random 32 byte transfers f...
MD5764802: Features: • Compatible with Base RDRAMs• 600 MB/s peak transfer rate per RDRAM• Rambus Signaling Level (RSL) interface• Synchronous, concurrent protocol for block-oriented, i...
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Symbol |
Parameter |
Min. |
Max. |
Unit |
V I,ABS |
Voltage applied to any RSL pin with respect to Gnd |
0.3 |
V DD,MAX+0.3 |
V |
V I,CMOS,ABS |
Voltage applied to any CMOS pin with respect to Gnd |
0.3 |
V DD+0.3 |
V |
V DD,ABS |
Voltage on VDD with respect to Gnd |
0.3 |
VDD,MAX+1.0 |
V |
T J,ABS |
Junction temperature under bias |
55 |
125 |
°C |
T STORE |
Storage temperature |
55 |
125 |
°C |
The 18/64-Megabit Concurrent Rambus™ DRAMs (RDRAM®) MD5764802 are extremely high-speed CMOS DRAMs organized as 2M or 8M words by 8 or 9 bits. They are capable of bursting unlimited lengths of data at 1.67 ns per byte (13.3 ns per eight bytes). The use of Rambus Signaling Level (RSL) technology permits 600 MHz transfer rates while using conventional system and board design methodologies. Low effective latency is attained by operating the two or four 2KB sense amplifiers as high speed caches, and by using random access mode (page mode) to facilitate large block transfers. Concurrent (simultaneous) bank operations permit high effective bandwidth using interleaved transactions.
MD5764802 RDRAMs are general purpose high-performance memory devices suitable for use in a broad range of applications including PC and consumer main memory, graphics, video, and any other application where high-performance at low cost is required.