Features: · -5 to +5 dBm LO Drive Level· High Isolation, 28 dB LO to RF· Inexpensive SOT-26 PackageSpecifications Parameter Ratings Input RF/IF Power2 +27 dBm Input LO Power2 +17 dBm Operating Voltages2 VDD = +6 volts Operating Temperature -30°C to +80°C Storage Temper...
MD57-0001: Features: · -5 to +5 dBm LO Drive Level· High Isolation, 28 dB LO to RF· Inexpensive SOT-26 PackageSpecifications Parameter Ratings Input RF/IF Power2 +27 dBm Input LO Power2 +17 d...
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Parameter |
Ratings |
Input RF/IF Power2 | +27 dBm |
Input LO Power2 | +17 dBm |
Operating Voltages2 | VDD = +6 volts |
Operating Temperature | -30°C to +80°C |
Storage Temperature | -65°C to +150°C |
The MD57-0001 is a floating FET mixer with an on-chip LO amplifier. The LO drive for the MD57-0001 can range from -5 to +5 dBm without severly impacting the mixer's performance. The MD57-0001 is ideally suited for cellular band communications handsets' that can provide only minimal amounts of LO drive. Typical applications include frequency up/down conversion and IQ modulation and demodulation in digital receivers and transmitters.
The MD57-0001 utilizes a patented "floating-FET" architecture. The on-chip LO amplifier allows the MD57-0001 to operate with as little as -5 dBm of LO drive making it an ideal choice for low power portable designs.
The MD57-0001 is fabricated using M/A-COM's 0.5 micron low noise GaAs MESFET process. This process features full passivation for increased performance and reliability. The MD57-0001 is 100% RF tested to ensure superior performance specification compliance.