MCR8SN

On-State RMS Current (It RMS) :
Maximum Gate Peak Inverse Voltage :
Mounting Style : Through Hole
Gate Trigger Current (Igt) : 0.2 mA
Packaging : Tube
Off-State Leakage Current @ VDRM IDRM : 0.01 mA
Rated Repetitive Off-State Voltage VDRM : 800 V
Holding Current (Ih Max) : 6 mA
Package / Case : TO-220AB
Gate Trigger Voltage (Vgt) : 1 V
Breakover Current IBO Max : 80 A
Forward Voltage Drop : 1.8 V at 16 A


Specifications

Parameter	Symbol	Value	Unit
Peak Repetitive Off-State Voltage (1) Peak Repetitive Reverse Voltage (TJ = 40 to 110°C; RGK = 1.0 KW) MCR8SD MCR8SM MCR8SN	VDRM VRRM	400 600 800	Volts
On-State RMS Current (All Conduction Angles)	IT(RMS)	8	Amps
Peak Non-repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125°C)	ITSM	90	Amps
Circuit Fusing Consideration (t = 8.3 ms)	I2t	34	Amps
Peak Gate Power (Pulse Width 1.0 s, TC = 80°C)	PGM	5.0	Amps
Average Gate Power (t = 8.3 ms, TC = 80°C)	PG(AV)	0.5	A2s
Peak Gate Current (Pulse Width 1.0 s, TC = 80°C)	IGM	2.0	Amps
Operating Junction Temperature Range	TJ	40 to +110	°C
Storage Temperature Range	Tstg	40 to +150	°C

(1) V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.