MCR8

Specifications

Parameter	Symbol	Value	Unit
Peak Repetitive Off-State Voltage (1) Peak Repetitive Reverse Voltage (TJ = 40 to 125°C) MCR8D MCR8M MCR8N	VDRM VRRM	400 600 800	Volts
On-State RMS Current (All Conduction Angles)	IT(RMS)	8	A
Peak Non-repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125°C)	ITSM	80	A
Circuit Fusing Consideration (t = 8.3 ms)	I2t	26.5	A2sec
Peak Gate Power (Pulse Width 1.0 s, TC = 80°C)	PGM	5.0	Watts
Average Gate Power (t = 8.3 ms, TC = 80°C)	PG(AV)	0.5	Watts
Peak Gate Current (Pulse Width 3 1.0 ms, TC = 80°C)	IGM	2.0	A
Operating Junction Temperature Range	TJ	40 to +125	°C
Storage Temperature Range	Tstg	40 to +150	°C

Description

Designed primarily for MCR8 halfwave ac control applications, such as motor controls, heating controls, and power upplies; or wherever halfwave, silicon gatecontrolled devices are needed.
• Blocking Voltage to 800 Volts
• On-State Current Rating of 8 Amperes RMS
• High Surge Current Capability - 80 Amperes
• Industry Standard TO220AB Package for Ease of Design
• Glass Passivated Junctions for Reliability and Uniformity