MCR8N

SCRs 800V 8A

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MCR8N Picture
SeekIC No. : 00696954 Detail

MCR8N: SCRs 800V 8A

floor Price/Ceiling Price

Part Number:
MCR8N
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Breakover Current IBO Max : 80 A Rated Repetitive Off-State Voltage VDRM : 800 V
Off-State Leakage Current @ VDRM IDRM : 0.01 mA Forward Voltage Drop : 1.8 V at 16 A
Gate Trigger Voltage (Vgt) : 1 V Gate Trigger Current (Igt) : 15 mA
Holding Current (Ih Max) : 30 mA Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

On-State RMS Current (It RMS) :
Maximum Gate Peak Inverse Voltage :
Mounting Style : Through Hole
Off-State Leakage Current @ VDRM IDRM : 0.01 mA
Packaging : Tube
Gate Trigger Voltage (Vgt) : 1 V
Package / Case : TO-220AB
Rated Repetitive Off-State Voltage VDRM : 800 V
Gate Trigger Current (Igt) : 15 mA
Holding Current (Ih Max) : 30 mA
Forward Voltage Drop : 1.8 V at 16 A
Breakover Current IBO Max : 80 A


Specifications

Parameter Symbol Value Unit
Peak Repetitive OffState Voltage(1)
Peak Repetitive Reverse Voltage
(TJ = 40 to 125°C) MCR8D
MCR8M
MCR8N
VDRM
VRRM

600
800
Volts
OnState RMS Current
(All Conduction Angles)
IT(RMS) 8.0 A
Peak Nonrepetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 125°C)
ITSM 80 A
Circuit Fusing Consideration (t = 8.3 ms) I2t 26.5 A2sec
Peak Gate Power (Pulse Width 1.0 ms, TC = 80°C) PGM 5.0 Watts
Average Gate Power (t = 8.3 ms, TC = 80°C) PG(AV) 0.5 Watts
Peak Gate Current (Pulse Width 1.0 ms, TC = 80°C) IGM 2.0 A
Operating Junction Temperature Range TJ 40 to +125 °C
Storage Temperature Range Tstg 40 to +125 °C



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