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MCR8DSN

Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage (1)Peak Repetitive Reverse Voltage(TJ = 40 to 110°C, RGK = 1.0 K) MCR8DSM MCR8DSN VDRMVRRM 600800 Volts OnState RMS Current(All Conduction Angles; TC = 90°C) IT(RMS) 8.0 Amps ...

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MCR8DSN: Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage (1)Peak Repetitive Reverse Voltage(TJ = 40 to 110°C, RGK = 1.0 K) MCR8DSM MCR8DSN VDRMVRRM 600...

MCR8DSN Data Sheet

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Part Number:
MCR8DSN
Supply Ability:
5000

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Description



Specifications

Parameter
Symbol
Value
Unit
Peak Repetitive OffState Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = 40 to 110°C, RGK = 1.0 K) MCR8DSM
                                                        MCR8DSN
VDRM
VRRM
600
800
Volts
OnState RMS Current
(All Conduction Angles; TC = 90°C)
IT(RMS)
8.0
Amps
Average OnState Current (All Conduction Angles; TC = 90°C)
        IT(AV)
5.1
Amps
Peak NonRepetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 110°C)
        ITSM
90
Amps
Circuit Fusing Consideration (t = 8.3 msec)
I2t
34
Amps
Peak Gate Power
(Pulse Width  10 sec, TC = 90°C)
PGM
5.0
A2s
Average Gate Power
(t = 8.3 msec, TC = 90°C)
IGM
0.5
Amps

Peak Gate Current (Pulse Width 10 sec, TC = 90°C)

 PGM

2.0

 Watts

Operating Junction Temperature Range
TJ
40 to +110
°C
Storage Temperature Range
Tstg
40 to +150
°C

(1) VDRM for all types can be applied on a continuous basis. Ratings apply for negative gate voltage or RGK = 1.0 K; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded.




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