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MCR8DCN

Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage (1)Peak Repetitive Reverse Voltage(TJ = 40 to 125°C) MCR8DCM MCR8DCN VDRMVRRM 600800 Volts OnState RMS Current(All Conduction Angles; TC = 105°C) I T(RMS) 8.0 Amps Average O...

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MCR8DCN: Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage (1)Peak Repetitive Reverse Voltage(TJ = 40 to 125°C) MCR8DCM MCR8DCN VDRMVRRM 600800 Volts ...

MCR8DCN Data Sheet

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Part Number:
MCR8DCN
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Parameter
Symbol
Value
Unit
Peak Repetitive OffState Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = 40 to 125°C) MCR8DCM
                                 MCR8DCN
VDRM
VRRM
600
800
Volts
OnState RMS Current
(All Conduction Angles; TC = 105°C)
I T(RMS)
8.0
Amps
Average OnState Current (All Conduction Angles; TC = 105°C)
I T(AV)
5.1
Amps
Peak NonRepetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 125°C)
I TSM
80
Amps
Circuit Fusing Consideration (t = 8.3 msec)
I2t
26
Amps
Peak Gate Power
(Pulse Width10 sec, TC = 105°C)
P GM
5.0
A2s
Average Gate Power
(t = 8.3 msec, TC = 105°C)
P G(AV)
0.5
Amps

Peak Gate Current (Pulse Width 10 sec, TC = 105°C)

I GM

 2.0

 Watts

Operating Junction Temperature Range
TJ
40 to +125
°C
Storage Temperature Range
Tstg
40 to +150
°C
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded.


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