Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage(1)(TJ = 40 to 110°C, Sine Wave,50 to 60 Hz, Gate Open) MCR723 MCR726 MCR728 VDRMVRRM 100400600 Volts On-State RMS Current(180° Conduction Angles; TC = 83°C) IT(RMS) 8.0 Amps ...
MCR728: Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage(1)(TJ = 40 to 110°C, Sine Wave,50 to 60 Hz, Gate Open) MCR723 MCR726 MCR728 VDRMVRRM 100400600...
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Parameter |
Symbol |
Value |
Unit |
Peak Repetitive OffState Voltage(1) (TJ = 40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR723 MCR726 MCR728 |
VDRM VRRM |
100 400 600 |
Volts |
On-State RMS Current (180° Conduction Angles; TC = 83°C) |
IT(RMS) |
8.0 |
Amps |
Peak Non-Repetitive Surge Current (1/2 Cycle, 60 Hz, TJ = 110°C) |
ITSM |
100 |
Amps |
Circuit Fusing Consideration (t = 8.3 ms) |
I2t |
40 |
A2sec |
Peak Gate Power (Pulse Width 1.0 s, TC = 80°C) |
PGM |
±5.0 |
Volts |
Average Gate Power (t = 8.3 ms, TC = 80°C) |
PG(AV) |
1.0 |
Amp |
Peak Gate Current (Pulse Width 3 1.0 ms, TC = 80°C) |
IGM |
5.0 |
WattS |
Average Gate Power (t = 8.3 ms, TC = 83°C) | PG(AV) | 0.75 | Watt |
Operating Junction Temperature Range |
TJ |
40 to +110 |
°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Mounting Torque | - | 8.0 | in. lb. |
VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.