Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage(1)(TC = 40 to +110°C, Sine Wave,50 to 60 Hz, Gate Open) MCR703AMCR704AMCR706AMCR708A VDRMVRRM 100200400600 Volts Peak Non-Repetitive OffState Voltage(Sine Wave, 50 to 60 Hz, Gate Open,TC = 40 to +110°C) M...
MCR704AT4: Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage(1)(TC = 40 to +110°C, Sine Wave,50 to 60 Hz, Gate Open) MCR703AMCR704AMCR706AMCR708A VDRMVRRM 100200400600 V...
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Parameter | Symbol | Value | Unit |
Peak Repetitive OffState Voltage(1) (TC = 40 to +110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR703A MCR704A MCR706A MCR708A |
VDRM VRRM |
100 200 400 600 |
Volts |
Peak Non-Repetitive OffState Voltage (Sine Wave, 50 to 60 Hz, Gate Open, TC = 40 to +110°C) MCR703A MCR704A MCR706A MCR708A |
VRSM | 150 250 450 650 |
Volts |
OnState RMS Current (180° Conduction Angles, TC = 90°C) |
IT(RMS) | 4.0 | Amps |
Average OnState Current (180° Conduction Angles) TC = 40 to +90°C TC = +100°C |
IT(AV) | 2.6 1.6 |
Amps |
Non-Repetitive Surge Current (1/2 Sine Wave, 60 Hz, TJ = 110°C) (1/2 Sine Wave, 1.5 ms, TJ = 110°C) |
ITSM | 25 35 |
Amps |
Circuit Fusing Consideration (t = 8.3 ms) | I2t | 2.6 | A2s |
Forward Peak Gate Power (Pulse Width 3 10 s, TC = 90°C) |
PGM | 0.5 | Watt |
Forward Average Gate Power (t = 8.3 ms, TC = 90°C) |
PG(AV) | 0.1 | Watt |
Forward Peak Gate Current (Pulse Width 3 10 s, TC = 90°C) |
IGM | 0.2 | Amp |
Operating Junction Temperature Range | TJ | 40 to +110 | °C |
Storage Temperature Range | Tstg | 40 to +110 | °C |