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MCR704AT4

Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage(1)(TC = 40 to +110°C, Sine Wave,50 to 60 Hz, Gate Open) MCR703AMCR704AMCR706AMCR708A VDRMVRRM 100200400600 Volts Peak Non-Repetitive OffState Voltage(Sine Wave, 50 to 60 Hz, Gate Open,TC = 40 to +110°C) M...

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MCR704AT4: Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage(1)(TC = 40 to +110°C, Sine Wave,50 to 60 Hz, Gate Open) MCR703AMCR704AMCR706AMCR708A VDRMVRRM 100200400600 V...

MCR704AT4 Data Sheet

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Part Number:
MCR704AT4
Supply Ability:
5000

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Specifications

Parameter Symbol Value Unit
Peak Repetitive OffState Voltage(1)
(TC = 40 to +110°C, Sine Wave,
50 to 60 Hz, Gate Open) MCR703A
MCR704A
MCR706A
MCR708A		 VDRM
VRRM
100
200
400
600		 Volts
Peak Non-Repetitive OffState Voltage
(Sine Wave, 50 to 60 Hz, Gate Open,
TC = 40 to +110°C) MCR703A
MCR704A
MCR706A
MCR708A		 VRSM 150
250
450
650		 Volts
OnState RMS Current
(180° Conduction Angles, TC = 90°C)		 IT(RMS) 4.0 Amps
Average OnState Current
(180° Conduction Angles)
TC = 40 to +90°C
TC = +100°C		 IT(AV) 2.6
1.6		 Amps
Non-Repetitive Surge Current
(1/2 Sine Wave, 60 Hz, TJ = 110°C)
(1/2 Sine Wave, 1.5 ms, TJ = 110°C)		 ITSM 25
35		 Amps
Circuit Fusing Consideration (t = 8.3 ms) I2t 2.6 A2s
Forward Peak Gate Power
(Pulse Width 3 10 s, TC = 90°C)		 PGM 0.5 Watt
Forward Average Gate Power
(t = 8.3 ms, TC = 90°C)		 PG(AV) 0.1 Watt
Forward Peak Gate Current
(Pulse Width 3 10 s, TC = 90°C)		 IGM 0.2 Amp
Operating Junction Temperature Range TJ 40 to +110 °C
Storage Temperature Range Tstg 40 to +110 °C



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