MCR726

Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage(1)(TJ = 40 to 110°C, Sine Wave,50 to 60 Hz, Gate Open) MCR723 MCR726 MCR728 VDRMVRRM 100400600 Volts On-State RMS Current(180° Conduction Angles; TC = 83°C) IT(RMS) 8.0 Amps ...

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SeekIC No. : 004418741 Detail

MCR726: Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage(1)(TJ = 40 to 110°C, Sine Wave,50 to 60 Hz, Gate Open) MCR723 MCR726 MCR728 VDRMVRRM 100400600...

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Part Number:
MCR726
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Specifications

Parameter
Symbol
Value
Unit
Peak Repetitive OffState Voltage(1)
(TJ = 40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open) MCR723
                                       MCR726
                                       MCR728
VDRM
VRRM
100
400
600
Volts
On-State RMS Current
(180° Conduction Angles; TC = 83°C)
IT(RMS)
8.0
Amps
Peak Non-Repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = 110°C)
ITSM
100
Amps
Circuit Fusing Consideration (t = 8.3 ms)
I2t
40
A2sec
Peak Gate Power (Pulse Width 1.0 s, TC = 80°C)
PGM
±5.0
Volts
Average Gate Power (t = 8.3 ms, TC = 80°C)
PG(AV)
1.0
Amp
Peak Gate Current (Pulse Width 3 1.0 ms, TC = 80°C)
IGM
5.0
WattS
 Average Gate Power (t = 8.3 ms, TC = 83°C)       PG(AV)         0.75      Watt
Operating Junction Temperature Range
TJ
40 to +110
°C
Storage Temperature Range
Tstg
40 to +150
°C
                               Mounting Torque           -          8.0      in. lb.

VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.




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