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MCR693

Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage(1)(TJ = 40 to +125°C, Gate Open)MCR692MCR693 VDRMVRRM 50100 Volts Peak Discharge Current(2) ITM 750 A On-State RMS Current(180° Conduction Angles; TC = 85°C) IT(RMS)...

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MCR693: Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage(1)(TJ = 40 to +125°C, Gate Open)MCR692MCR693 VDRMVRRM 50100 Volts Peak Discharge Curre...

MCR693 Data Sheet

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Part Number:
MCR693
Supply Ability:
5000

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Specifications

Parameter
Symbol
Value
Unit
Peak Repetitive OffState Voltage(1)
(TJ = 40 to +125°C, Gate Open)
MCR692
MCR693
VDRM
VRRM
50
100
Volts
Peak Discharge Current(2)
ITM
750
A
On-State RMS Current
(180° Conduction Angles; TC = 85°C)
IT(RMS)
25
A
Average On-State Current
(180° Conduction Angles; TC = 85°C)
IT(AV)
16
A2sec
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TJ = 125°C)
ITSM
300
Watts
Circuit Fusing Considerations
(t = 8.3 ms)
I2t
375
Watts
Forward Peak Gate Current
(Pulse Width 1.0 s, TC = 80°C)
IGM
2.0
A

Forward Peak Gate Power
(t 1.0 s, TC = 85°C)

PGM

20

Watts

Forward Average Gate Power
(t = 8.3 ms, TC = 85°C)

PG(AV)

0.5

Watt

Operating Junction Temperature Range
TJ
40 to +125
°C
Storage Temperature Range
Tstg
40 to +150
°C

Mounting Torque

-

8.0

in. lb.

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are xceeded.
2. Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially decaying current pulse.




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