Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage(1)(TJ = - 40 to +125°C, Gate Open)MCR682 VDRMVRRM 50 Volts Peak Discharge Current(2) ITM 300 Amps On-State RMS Current(180° Conduction Angles; TC = 85°C) IT(RMS) 12 ...
MCR682: Specifications Parameter Symbol Value Unit Peak Repetitive OffState Voltage(1)(TJ = - 40 to +125°C, Gate Open)MCR682 VDRMVRRM 50 Volts Peak Discharge Current(2) ...
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Parameter |
Symbol |
Value |
Unit |
Peak Repetitive OffState Voltage(1) (TJ = - 40 to +125°C, Gate Open) MCR682 |
VDRM VRRM |
50 |
Volts |
Peak Discharge Current(2) |
ITM |
300 |
Amps |
On-State RMS Current (180° Conduction Angles; TC = 85°C) |
IT(RMS) |
12 |
Amps |
Average On-State Current (180° Conduction Angles; TC = 85°C) |
I2t |
8.0 |
Amps |
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) |
PGM |
100 |
Amps |
Circuit Fusing Considerations (t = 8.3 ms) |
PG(AV) |
40 |
A2s |
Forward Peak Gate Current (t 1.0 s, TC = 85°C) |
IGM |
2.0 |
Amps |
Forward Peak Gate Power |
PGM |
20 |
Watts |
Forward Average Gate Power |
PG(AV) |
0.5 |
Watt |
Operating Junction Temperature Range |
TJ |
40 to +125 |
°C |
Storage Temperature Range |
Tstg |
40 to +150 |
°C |
Mounting Torque |
- |
8.0 |
in. lb. |
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
(2) Ratings apply for tw = 1 ms. See Figure 1 for ITM capability for various duration of an exponentially decaying current waveform, tw is defined as 5 time constants of an exponentially decaying current pulse.