MCM69R818A

The MCM69R818A is one member of the MCM69R818 family which is designed as the 4 megabit synchronous late write fast static RAM that can be used in secondary cache and ATM switch, Telecom, and other high speed memory applications. This device organized as 128K words by 36 bits wide are fabricated in Motorola's high performance silicon gate BiCMOS technology.

Features of the MCM69R818A are:(1)119 Bump, 50 mil (1.27 mm) Pitch, 14 mm x 22 mm Plastic Ball Grid Array (PBGA) Package;(2)Sleep Mode Operation (ZZ Pin);(3)Optional x 18 or x 36 organization;(4)Differential Clock Inputs;(5)Boundary Scan (JTAG) IEEE 1149.1 Compatible;(6)Asynchronous Output Enable;(7)Register to Register Synchronous Operation;(8)LVTTL 3.3 V I/O (VDDQ);(9)Single 3.3 V + 10%, -5% Operation;(10)Byte Write Control.

The absolute maximum ratings of the MCM69R818A can be summarized as:(1)Core Supply Voltage: -0.5 to +4.6 V;(2)Output Supply Voltage: -0.5 to VDD+ 0.5 V;(3)Voltage On Any Pin: -0.5 to VDD+0.5 V;(4)Input Current (per I/O): ±50 mA;(5)Output Current (per I/O): ±70 mA;(6)Operating Temperature: 0 to +70 °C;(7)Temperature Under Bias:10 to +85 °C;(8)Storage Temperature: -55 to +125 °C. If you want to know more information such as the electrical characteristics about the MCM69R818A, please download the datasheet in www.seekic.com or www.chinaicmart.com .