MCM69R736A

Features: • Byte Write Control• Single 3.3 V +10%, 5% Operation• HSTL I/O (JEDEC Standard JESD86 Class I Compatible)• HSTL User Selectable Input TripPoint• HSTL Compatible Programmable Impedance Output Drivers• Register to Register Synchronous Operation̶...

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SeekIC No. : 004417931 Detail

MCM69R736A: Features: • Byte Write Control• Single 3.3 V +10%, 5% Operation• HSTL I/O (JEDEC Standard JESD86 Class I Compatible)• HSTL User Selectable Input TripPoint• HSTL Com...

floor Price/Ceiling Price

Part Number:
MCM69R736A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• Byte Write Control
• Single 3.3 V +10%, 5% Operation
• HSTL I/O (JEDEC Standard JESD86 Class I Compatible)
• HSTL User Selectable Input TripPoint
• HSTL Compatible Programmable Impedance Output Drivers
• Register to Register Synchronous Operation
• Asynchronous Output Enable
• Boundary Scan (JTAG) IEEE 1149.1 Compatible
• Differential Clock Inputs
• Optional x 18 or x 36 organization
• MCM69R736A/818A5 = 5 ns
  MCM69R736A/818A6 = 6 ns
  MCM69R736A/818A7 = 7 ns
  MCM69R736A/818A8 = 8 ns
• Sleep Mode Operation (ZZ Pin)
• 119 Bump, 50 mil (1.27 mm) Pitch, 14 mm x 22 mm Plastic Ball Grid Array (PBGA) Package



Specifications

Rating Symbol Value Unit
Core Supply Voltage VDD 0.5 to + 4.6 V
Output Supply Voltage VDDQ 0.5 to VDD + 0.5 V
Voltage On Any Pin Vin 0.5 to VDD + 0.5 V
Input Current (per I/O) Iin ± 50 mA
Output Current (per I/O) Iout ± 70 mA
Power Dissipation (See Note 2) PD - W
Operating Temperature TA 0 to + 70 °C
Temperature Under Bias Tbias 10 to + 85 °C
Storage Temperature Tstg 55 to + 125 °C



Description

The MCM69R736A/818A is a 4 megabit synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch,Telecom, and other high speed memory applications. The MCM69R818A organized as 256K words by 18 bits, and the MCM69R736A organized as 128K words by 36 bits wide are fabricated in Motorola's high performance silicon gate BiCMOS technology.

The differential CK clock inputs of the MCM69R736A control the timing of read/write operations of the RAM. At the rising edge of the CK clock all addresses, write enables, and synchronous selects are registered. An internal buffer and special logic enable the memory to accept write data on the rising edge of the CK clock a cycle after address and control signals. Read data is driven on the rising edge of the CK clock also.|

The RAM of the MCM69R736A uses HSTL inputs and outputs. The adjustable input trip point (Vref) and output voltage (VDDQ) gives the system designer greater flexibility in optimizing system performance.

The synchronous write and byte of the MCM69R736A enables allow writing to individual bytes or the entire word.

The impedance of the output buffers of the MCM69R736A is programmable allowing the outputs to match the impedance of the circuit traces which reduces signal reflections.


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