MCM69P735

PinoutSpecifications Rating Symbol Value Unit Power Supply Voltage VDD VSS 0.5 to + 4.6 V I/O Supply Voltage VDDQ VSS 0.5 to VDD V Input Voltage Relative to VSS for AnyPin Except VDD (See Note 2) Vin, Vout VSS 0.5 toVDD + 0.5 V Input Voltage (ThreeState I/O) VIT V...

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SeekIC No. : 004417920 Detail

MCM69P735: PinoutSpecifications Rating Symbol Value Unit Power Supply Voltage VDD VSS 0.5 to + 4.6 V I/O Supply Voltage VDDQ VSS 0.5 to VDD V Input Voltage Relative to VSS for AnyPin E...

floor Price/Ceiling Price

Part Number:
MCM69P735
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Pinout

  Connection Diagram


Specifications

Rating Symbol Value Unit
Power Supply Voltage VDD VSS 0.5 to + 4.6 V
I/O Supply Voltage VDDQ VSS 0.5 to VDD V
Input Voltage Relative to VSS for Any
Pin Except VDD (See Note 2)
Vin, Vout VSS 0.5 to
VDD + 0.5
V
Input Voltage (ThreeState I/O) VIT VSS 0.5 to
VDDQ + 0.5
V
Output Current (per I/O) Iout ± 20 mA
Package Power Dissipation PD 1.6 W
Temperature Under Bias Tbias 10 to 85 °C
Storage Temperature Tstg 55 to 125 °C
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPERATING
CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. This is a steadystate DC parameter that is in effect after the power supply has
achieved its nominal operating level. Power sequencing can not be controlled and
is not allowed.
3. Power dissipation capability is dependent upon package characteristics and use
environment. See Package Thermal Characteristics.



Description

The MCM69P735 is a 4M bit synchronous fast static RAM designed to provide a burstable, high performance, secondary cache for the PowerPCE and other high performance microprocessors. It is organized as 128K words of 36 bits each. This device integrates input registers, an output register, a 2bit address counter, and a high speed SRAM onto a single monolithic circuit for reduced parts count in cache data RAM applications. Synchronous design allows precise cycle control with the use of an external clock (K).

Addresses (SA), data inputs (DQx) of the MCM69P735, and all control signals except output enable (G) and linear burst order (LBO) are clock (K) controlled through positive edgetriggered noninverting registers.

Bursts of the MCM69P735 can be initiated with either ADSP or ADSC input pins. Subsequent burst addresses can be generated internally by the MCM69P735 (burst sequence operates in linear or interleaved mode dependent upon the state of LBO) and controlled by the burst address advance (ADV) input pin.

Write cycles of the MCM69P735 are internally selftimed and are initiated by the rising edge of the clock (K) input. This feature eliminates complex offchip write pulse generation and provides increased timing flexibility for incoming signals.

Synchronous byte write (SBx) of the MCM69P735, synchronous global write (SGW), and synchronous write enable (SW) are provided to allow writes to either individual bytes or to all bytes. The four bytes are designated as "a", "b", "c", and "d". SBa controls DQa, SBb controls DQb, etc. Individual bytes are written if the selected byte writes SBx are asserted with SW. All bytes are written if either SGW is asserted or if all SBx and SW are asserted.

For read cycles, pipelined SRAMs output data is temporarily stored by an edgetriggered output register and then released to the output buffers at the next rising edge of clock (K).

The MCM69P735 operates from a 3.3 V core power supply and all outputs operate on a 3.3 V or 2.5 V power supply. All inputs and outputs are JEDEC standard JESD85 compatible.




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