MCM69L736C

The MCM69L736C is a 4Mbit synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applications. It is fabricated in Motorola's high performance silicon gate BiCMOS technology.

The features of MCM69L736C can be summarized as:(1)Byte Write Control; (2)Single 3.3 V +10%, 5% Operation; (3)HSTL - I/O (JEDEC Standard JESD86 Class I Compatible); (4)HSTL - User Selectable Input TripPoint; (5)HSTL - Compatible Programmable Impedance Output Drivers; (6)Register to Latch Synchronous Operation; (7)Asynchronous Output Enable; (8)Boundary Scan (JTAG) IEEE 1149.1 Compatible; (9)Differential Clock Inputs; (10)Optional x18 or x36 Organization; (11)Sleep Mode Operation (ZZ Pin); (12)119Bump, 50 mil (1.27 mm) Pitch, 14 mm x 22 mm Plastic Ball Grid Array (PBGA) Package.

The absolute maximum ratings of MCM69L736C are:(1)Core Supply Voltage:-0.5V to 4.6 V; (2)Output Supply Voltage:-0.5V to VDD + 0.5 V; (3)Voltage On Any Pin:-0.5V to VDD + 0.5 V; (4)Input Current (per I/O):±50 mA; (5)Output Current (per I/O):±70 mA; (6)Operating Temperature:0°C to 70 °C; (7)Temperature Under Bias:10°C to 85 °C; (8)Storage Temperature:55°C to 125 °C.

If you want to know more information such as the electrical characteristics about the MCM69L736C, please download the datasheet in www.seekic.com or www.chinaicmart.com .