MCM69F819TQ8.5R

The MCM69F819TQ8.5R is one member of the MCM69F819 family which is designed as the 256K x 18 bit flow-through burstRAM synchronous fast ststic RAM. This device integrates input registers, a 2bit address counter, and high speed SRAM onto a single monolithic circuit for reduced parts count in cache data RAM applications. All inputs and outputs of this device are JEDEC standard JESD85 compatible.

Features of the MCM69F819TQ8.5R are:(1)3.3 V + 10%, -5% Core Power Supply, 2.5 V or 3.3 V I/O Supply; (2)ADSP, ADSC, and ADV Burst Control Pins; (3)Selectable Burst Sequencing Order (Linear / Interleaved); (4)Single-cycle Deselect Timing; (5)Internally Self-timed Write Cycle; (6)Byte Write and Global Write Control; (7)PB1 Version 2.0 Compatible; (8)JEDEC Standard 119-pin PBGA and 100-pin TQFP Packages.

The absolute maximum ratings of the MCM69F819TQ8.5R can be summarized as:(1)Power Supply Voltage:Vss-0.5 to +4.6 V;(2)I/O Supply Voltage: Vss-0.5 to VDD V;(3)Input Voltage Relative to VSS for Any Pin Except VDD: Vss-0.5 to VDD+0.5 V;(4)Input Voltage (ThreeState I/O): Vss-0.5 to VDD+0.5 V;(5)Output Current (per I/O): ±20 mA;(6)Package Power Dissipation: 1.6 W;(7)Ambient Temperature: 0 to 70 °C;(8)Die Temperature: 110 °C;(9)Temperature Under Bias: -10 to 85 °C;(10)Storage Temperature: -55 to 125 °C. If you want to know more information such as the electrical characteristics about the MCM69F819TQ8.5R, please download the datasheet in www.seekic.com or www.chinaicmart.com .