MBM30LV0128

Note: Minimum DC voltage on input or I/O pins are -0.5 V. During voltage transtions, inputs may undershoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC voltage on input pins are VCC + 0.5 V and on I/O pins are VCCq + 0.5 V. During voltage transitions, input pins may overshoot to VCC + 2.0 V for periods of up to 20 ns and I/O pins may overshoot to VCCq + 2.0 V for periods of up to 20 ns.

The MBM30LV0128 device is a single 3.3 V 16 M ´ 8 bit NAND flash memory organized as 528 byte ´ 32 pages ´ 1024 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store ECC code (Specifications indicated are on condition that ECC system would be combined) . Program and read data is transferred between the memory array and page register in 528 byte increments. A 528 byte page can be programmed in 200 ms and an 16 K byte block can be erased in 2 ms under typical conditions. An internal controller automates all programs and erases operations including the verification of data margins. Data within a page can be read with a 50 ns cycle time per byte. The I/O pins are utilized for both address and data input/output as well as command inputs. The MBM30LV0128 is an ideal solution for applications requiring mass non-volatile storage such as solid state file storage, digital recording, image file memory for still cameras, and other uses which require high density and non-volatile storage.