MBM30LV0032

Features: • 3.3 V-only operating voltage (2.7 V to 3.6 V) Minimizes system level power requirements• Organization Memory Cell Array : (4M + 128K) ´8 bit Data Register : (512 + 16) ´8 bit• Automatic Program and Erase Page Program: (512 + 16) Byte Block Erase : (8K + 25...

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SeekIC No. : 004414202 Detail

MBM30LV0032: Features: • 3.3 V-only operating voltage (2.7 V to 3.6 V) Minimizes system level power requirements• Organization Memory Cell Array : (4M + 128K) ´8 bit Data Register : (512 + 16) ...

floor Price/Ceiling Price

Part Number:
MBM30LV0032
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• 3.3 V-only operating voltage (2.7 V to 3.6 V) Minimizes system level power requirements
• Organization Memory Cell Array : (4M + 128K) ´8 bit Data Register : (512 + 16) ´8 bit
• Automatic Program and Erase Page Program: (512 + 16) Byte Block Erase : (8K + 256) Byte
• 528 Byte Page Read Operation Random Access : 7 ms (Max.) Serial Access : 35 ns (Max.)
• Fast Program and Erase Program Time : 200 ms (Typ.) / page Block Erase Time : 2 ms (Typ.) / block
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
• 1,000,000 write/erase cycle guaranteed (ECC system required)
• Command Register Operation
• Package 44(40)-pin TSOP Type II (0.8 mm pitch) Normal/Reverse Type
• Data Retention: 10 years



Pinout

  Connection Diagram


Specifications

Parameter Symbol Rating Unit
Min Max
Ambient Temperature with Power Applied TA − 40 +85 °C
Storage temperature Tstg 55 +125 °C
Voltage on a I/O pin with respect to Ground * VI/O 0.6 VCCq +0.5 V
Voltage on a I/O pin with respect to Ground * VIN 0.6 VCC +0.5 V
Power Supply Voltage VCC 0.6 +5.5 V
  VCCq 0.6 +6.0 V
* : Use AVCC and VCC set at the same voltage. Take care so that AVR does not exceed AVCC + 0.3 V and AVCC does not exceed VCC, such as when power is turned on.


Description

The MBM30LV0032 device is a single 3.3 V 4M ´ 8 bit NAND flash memory organized as 528 byte ´ 16 pages ´ 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store ECC code(Specifications indicated are on condition that ECC system would be combined.). Program and read data is transferred between the memory array and page register in 528 byte increments. A 528 byte page can be programmed in 200 ms and an 8K byte block can be erased in 2 ms under typical conditions. An internal controller automates all program and erase operations including the verification of data margins. Data within a page can be read with a 50 ns cycle time per byte. The I/O pins are utilized for both address and data input/output as well as command inputs. The MBM30LV0032 is an ideal solution for applications requiring mass non-volatile storage such as solid state file storage, digital recording, image file memory for still cameras, and other uses which require high density and non-volatile storage.




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