Features: • 3.3 V-only operating voltage (2.7 V to 3.6 V) Minimizes system level power requirements• Organization Memory Cell Array : (4M + 128K) ´8 bit Data Register : (512 + 16) ´8 bit• Automatic Program and Erase Page Program: (512 + 16) Byte Block Erase : (8K + 25...
MBM30LV0032: Features: • 3.3 V-only operating voltage (2.7 V to 3.6 V) Minimizes system level power requirements• Organization Memory Cell Array : (4M + 128K) ´8 bit Data Register : (512 + 16) ...
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Features: · Low saturation voltage and high speed.· Low turn-OFF switching loss.· Low noise due to...
Features: • 3.3 V-only operating voltage (2.7 V to 3.6 V) Minimizes system level power requi...
Parameter | Symbol | Rating | Unit | |
Min | Max | |||
Ambient Temperature with Power Applied | TA | − 40 | +85 | °C |
Storage temperature | Tstg | 55 | +125 | °C |
Voltage on a I/O pin with respect to Ground * | VI/O | 0.6 | VCCq +0.5 | V |
Voltage on a I/O pin with respect to Ground * | VIN | 0.6 | VCC +0.5 | V |
Power Supply Voltage | VCC | 0.6 | +5.5 | V |
VCCq | 0.6 | +6.0 | V |
The MBM30LV0032 device is a single 3.3 V 4M ´ 8 bit NAND flash memory organized as 528 byte ´ 16 pages ´ 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store ECC code(Specifications indicated are on condition that ECC system would be combined.). Program and read data is transferred between the memory array and page register in 528 byte increments. A 528 byte page can be programmed in 200 ms and an 8K byte block can be erased in 2 ms under typical conditions. An internal controller automates all program and erase operations including the verification of data margins. Data within a page can be read with a 50 ns cycle time per byte. The I/O pins are utilized for both address and data input/output as well as command inputs. The MBM30LV0032 is an ideal solution for applications requiring mass non-volatile storage such as solid state file storage, digital recording, image file memory for still cameras, and other uses which require high density and non-volatile storage.