Position: Home  > All Categories> Integrated Circuits (ICs) > MBM29XL12DF-70/80

MBM29XL12DF-70/80

Features: • 0.17 mm Process Technology• Single 3.0 V Read, Program and Erase Minimized system level power requirements• Simultaneous Read/Write (Program and Erase) Operations (Dual Bank)• FlexBankTM *1-Bank A: 16 Mbit (4K words ´8 and 32K words ´31)-Bank B: 48 M...

product image

MBM29XL12DF-70/80 Picture
See larger image
SeekIC No. : 004414200 Detail

MBM29XL12DF-70/80: Features: • 0.17 mm Process Technology• Single 3.0 V Read, Program and Erase Minimized system level power requirements• Simultaneous Read/Write (Program and Erase) Operations (Dual...

MBM29XL12DF-70/80 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
MBM29XL12DF-70/80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 0.17 mm Process Technology
• Single 3.0 V Read, Program and Erase Minimized system level power requirements
• Simultaneous Read/Write (Program and Erase) Operations (Dual Bank)
• FlexBankTM *1
-Bank A: 16 Mbit (4K words ´8 and 32K words ´31)
-Bank B: 48 Mbit (32K words ´96)
-Bank C: 48 Mbit (32K words ´96)
-Bank D: 16 Mbit (4K words ´8 and 32K words ´31)
• High Performance Page Mode
-25 ns maximum page access time at VCC = 3.0 V to 3.6 V(70 ns random access time)
-30 ns maximum page access time at VCC = 2.7 V to 3.1 V(80 ns random access time)
• 8 Words Page (´16) / 4 Double Words Page (´32) Size
• Compatible with JEDEC-Standard Commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard World-wide Pinouts
-90-pin SSOP (Package Suffix : PFV)
-96-ball FBGA (Package Suffix : PBT)
• Minimum 100,000 Program/Erase Cycles
• Sector Erase Architecture
-Eight 4K words, two hundred fifty -four 32K words, and eight 4K words sectors
-Any combination of sectors can be concurrently erased. Also supports full chip erase
• Dual Boot Block 16 by 4K words bootblock sectors, 8 at the top of the address range and 8 at the bottom of the address range
• HiddenROM Region
-128 words of HiddenROM region by using device address of word mode 000000h to 00007Fh (double word
-mode: 000000h to 00003Fh) accessible through a "HiddenROM Enable" command sequence
-Factory serialized and protected to provide a secure electronic serial number (ESN)
• Write Protect Pin (WP)
-Write Protect (WP) function allows protection of "outermost" 2´  4K words on both ends of boot sectors,
-regardless of sector protection/unprotection status
• Accelerate Pin (ACC) At VACC, increases program performance
• Embedded EraseTM *2 Algorithms Automatically preprograms and erases the chip or any sector
• Embedded ProgramTM *2 Algorithms Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit Feature for detection of program or erase cycle completion
• Ready/Busy Output (RY/BY) Hardware method for detection of program or erase cycle completion
• Automatic Sleep Mode When addresses remain stable, the device automatically switches itself to low power mode.
• Low VCC Write Inhibit £ VLKO
• Program Suspend/Resume Suspends the program operation to allow a read in another word
• Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device
• In accordance with CFI (Common Flash Memory Interface)
• Hardware Reset Pin (RESET) Hardware method to reset the device for reading array data
• New Sector Protection Persistent Sector Protection Password Sector Protection
• Hardware Sector Group Protection Hardware method disables any combination of sectors from program or erase operation


Pinout

Connection Diagram


Specifications

Parameter
Conditions
Rating
Units
Min
Max
Storage Temperature
Tstg
55
+125
°C
Ambient Temperature with Power Applied
TA
40
+85
°C
Voltage with Respect to Ground All Pins except
A9, OE, RESET *1, *2
VIN, VOUT
0.5
VCC+0.5
V
Power Supply Voltage *1
VCC
0.5
+4.0
V
A9, OE, and RESET *1, *3
VIN
0.5
+13.0
V



Description

The MBM29XL12DF-70/80 is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages. This device  is designed to be programmed in-system with the standard system 3.0 V Vcc supply. 12.0 V Vpp and 5.0 V Vcc are not required for program or erase operations. MBM29XL12DF-70/80 can also be reprogrammed in standard EPROM programmers.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tapes, Adhesives
803
AC452-2
Cables, Wires
821-0814-a
415-0100-150
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Switches
US32DMRJ
HBGQ22P-11ET
Optical Inspection Equipment
AA924
A21K4B
View more