MBM29BS

Features: • 0.13 mm process technology• Single 1.8 V read, program and erase (1.65 V to 1.95 V)• Simultaneous Read/Write operation (Dual Bank)• FlexBankTM*1Bank A: 16 Mbit (4 Kwords ´ 8 and 32 Kwords ´ 31)Bank B: 48 Mbit (32 Kwords ´ 96)Bank C: 48 Mbit (32...

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SeekIC No. : 004414064 Detail

MBM29BS: Features: • 0.13 mm process technology• Single 1.8 V read, program and erase (1.65 V to 1.95 V)• Simultaneous Read/Write operation (Dual Bank)• FlexBankTM*1Bank A: 16 Mbit (4...

floor Price/Ceiling Price

Part Number:
MBM29BS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/6

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Product Details

Description



Features:

• 0.13 mm process technology
• Single 1.8 V read, program and erase (1.65 V to 1.95 V)
• Simultaneous Read/Write operation (Dual Bank)
• FlexBankTM*1
Bank A: 16 Mbit (4 Kwords ´ 8 and 32 Kwords ´ 31)
Bank B: 48 Mbit (32 Kwords ´ 96)
Bank C: 48 Mbit (32 Kwords ´ 96)
Bank D: 16 Mbit (4 Kwords ´ 8 and 32 Kwords ´ 31)



Specifications

Parameter Symbol Rating Unit
Min Max
Storage Temperature Tstg 55 +125
Ambient Temperature with Power Applied TA 40 +85
Voltage with Respect to Ground All inputs and I/Os
pins except as noted below*1,*2
VIN, VOUT 0.5 VCCQ+0.5 V
Power Supply Voltage*1 VCC 0.5 +2.5 V
I/O's Power Supply Voltage VCCQ 0.5 +2.5 V
ACC*1,*3 VACC 0.5 +10.5 V

*1 : Voltage is defined on the basis of VSS = GND = 0 V.
*2 : Minimum DC voltage on input or l/O pins is 0.5 V. During voltage transitions, input or I/O pins may undershoot VSS to 2.0 V for periods of up to 20 ns. Maximum DC voltage on input or l/O pins is VCC +0.5 V. During voltage ransitions, input or I/O pins may overshoot to VCC +2.0 V for periods of up to 20 ns.
*3 : Minimum DC input voltage on ACC pin is 0.5 V. During voltage transitions, ACC pin may undershoot VSS to 2.0 V for periods of up to 20 ns. Voltage difference between input and supply voltage (VIN - VCC) does not exceed +8.0 V. Maximum DC input voltage on ACC pin is +10.5 V which may overshoot to +12.5 V for periods of up to 20 ns.




Description

The MBM29BS/FS12DH is a 128 Mbit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 8M words of 16 bits each. The device offered in a 80-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. MBM29BS can also be programmed in standard EPROM programmers.




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