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MBM29QM96DF-65/80

Features: • 0.17 mm Process Technology• Single 3.0 V Read, Program and Erase Minimized system level power requirements• Simultaneous Read/Write (Program and Erase) Operations (Dual Bank)• FlexBankTM*1-Bank A: 12 Mbit (4K words ´ 8 and 32K words ´ 23)-Bank B: 36 ...

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SeekIC No. : 004414193 Detail

MBM29QM96DF-65/80: Features: • 0.17 mm Process Technology• Single 3.0 V Read, Program and Erase Minimized system level power requirements• Simultaneous Read/Write (Program and Erase) Operations (Dual...

MBM29QM96DF-65/80 Data Sheet

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Part Number:
MBM29QM96DF-65/80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• 0.17 mm Process Technology
• Single 3.0 V Read, Program and Erase Minimized system level power requirements
• Simultaneous Read/Write (Program and Erase) Operations (Dual Bank)
• FlexBankTM*1
-Bank A: 12 Mbit (4K words ´ 8 and 32K words ´ 23)
-Bank B: 36 Mbit (32K words ´ 72)
-Bank C: 36 Mbit (32K words ´ 72)
-Bank D: 12 Mbit (4K words ´ 8 and 32K words ´ 23)
• Enhanced VI/O (VCCQ) Feature
-Input/Output voltage generated on the device is determined based on the VI/O level
• High Performance Page Mode
-25 ns maximum page access time (65 ns random access time)
• 8 Words Page Size
• Compatible with JEDEC-Standard Commands Uses same software commands as E2PROMs
• Minimum 100,000 Program/Erase Cycles
• Sector Erase Architecture
-Eight 4K words, a hundred ninety 32K words, eight 4K words sectors
-Any combination of sectors can be concurrently erased. Also supports full chip erase
• Dual Boot Block
-16 by 4K words bootblock sectors, 8 at the top of the address range and 8 at the bottom of the address range
• HiddenROM Region
-256 byte of HiddenROM, accessible through a new "HiddenROM Enable" command sequence
-Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC Input Pin
-At VIL, allows protection of "outermost" 2 ´ 4K words on both ends of boot sectors, regardless of sector
-protection/unprotection status
-At VIH, allows removal of boot sector protection
-At VACC, increases program performance
• Embedded EraseTM*2 Algorithms Automatically preprograms and erases the chip or any sector
• Embedded ProgramTM*2 Algorithms Automatically programs and verifies data at specified address
• Data Polling and Toggle Bit Feature for detection of program or erase cycle completion
• Ready/Busy Output (RY/BY) Hardware method for detection of program or erase cycle completion
• Automatic Sleep Mode When addresses remain stable, the device automatically switches itself to low power mode.
• Low VCC Write Inhibit £ VLKO
• Program Suspend/Resume Suspends the program operation to allow a read in another word
• Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device
• In accordance with CFI (Common Flash Memory Interface)
• Hardware Reset Pin (RESET) Hardware method to reset the device for reading array data
• New Sector Protection
-Persistent Sector Protection
-Password Sector Protection


Pinout

Connection Diagram


Specifications

Parameter
Conditions
Rating
Units
Min
Max
Storage Temperature
Tstg
55
+125
°C
Ambient Temperature with Power Applied
TA
40
+85
°C
Voltage with Respect to Ground All Pins except
A9, OE,RESET *1, *2
VIN, VOUT
0.5
VCC+0.5
V
Power Supply Voltage *1
VCC
0.5
+4.0
V
A9, OE, and RESET *1, *3
VIN
0.5
+13.0
V
WP/ACC *1, *4
VACC
0.5
+10.5
V



Description

The MBM29QM96DF-65/80 is 96M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 6M words by 16 bits. The device is offered in a 80-ball FBGA package. This device is designed to be programmed in-system with the standard system 3.0 V Vcc supply. 12.0 V Vpp and 5.0 V Vcc are not required for program or erase operations. MBM29QM96DF-65/80 can also be reprogrammed in standard EPROM programmers.




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