PinoutDescriptionThe MBM29PL64LM10TN is a 64M-bit, 3.0 V-only Flash memory organized as 8M bytes by 8 bits or 4M words by 16 bits. The MBM29PL64LM10TN is offered in 48-pin, 58-pin TSOP(1) and 80-ball FBGA. The device is designed to be programmed in-system with the standard 3.0 V VCC supply. 12.0 V...
MBM29PL64LM10TN: PinoutDescriptionThe MBM29PL64LM10TN is a 64M-bit, 3.0 V-only Flash memory organized as 8M bytes by 8 bits or 4M words by 16 bits. The MBM29PL64LM10TN is offered in 48-pin, 58-pin TSOP(1) and 80-bal...
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The MBM29PL64LM10TN is a 64M-bit, 3.0 V-only Flash memory organized as 8M bytes by 8 bits or 4M words by 16 bits. The MBM29PL64LM10TN is offered in 48-pin, 58-pin TSOP(1) and 80-ball FBGA. The device is designed to be programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
Features of the MBM29PL64LM10TN are:(1)0.23 m process technology;(2)single 3.0 V read, program and erase minimizes system level power requirements;(3)industry-standard pinouts;(4)minimum 100,000 program/erase cycles;(5)high performance page mode fast 8 bytes / 4 words access capablilty;(6)sector erase architecture;(7)256 bytes / 128 words of HiddenROM, accessible through a "HiddenROM Entry" command sequence factory serialized and protected to provide a secure electronic serial number (ESN);(8)WP/ACC input pin;(9)embedded erase algorithms automatically pre-programs and erases the chip or any sector;(10)embedded program algorithms automatically writes and verifies data at specified address;(11)data polling and toggle bit feature for detection of program or erase cycle completion;(12)ready/busy output (RY/BY) hardware method for detection of program or erase cycle completion;(13)automatic sleep mode when addresses remain stable, automatically switches themselves to low power mode;(14)program suspend/resume suspends the program operation to allow a read in another address;(15)low VCC write inhibit 2.5 V;(16)erase suspend/resume suspends the erase operation to allow a read data and/or program in another sector within the same device;(17)Sector group protection hardware method disables any combination of sector groups from program or erase operations;(18)sector group protection set function by extended sector protect command;(19)fast programming function by extended Command;(20)temporary sector group unprotection;(21)in accordance with CFI.
The absolute maximum ratings of the MBM29PL64LM10TN can be summarized as:(1):the parameter is storage temperature,the symbol is Tstg,the rating is -55 to +125,the unit is ;(2):the parameter is ambient temperature with power applied,the symbol is TA,the rating is -40 to +85,the unit is ;(3):the parameter is voltage with respect to ground all pins except A9, OE, RESET,the symbol is VIN,VOUT,the rating is -0.5 to Vcc+0.5,the unit is V;(4):the parameter is power supply voltage,the symbol is Vcc,the rating is -0.5 to +4.0,the unit is V;(5):the parameter is A9, OE, and RESET,the symbol is VIN,the rating is -0.5 to +12.5,the unit is V;(6):the parameter is WP/ACC,the symbol is VACC,the rating is -0.5 to +12.5,the unit is V.