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MBM29PL3200TE

Features: • 0.23 m Process Technology• Single 3.0 V read, program and erase Minimized system level power requirements• High Performance Page Mode 25 ns maximum page access time (70 ns random access time)• 8 words Page ( ´ 16) /4 double words ( ´ 32) size• ...

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SeekIC No. : 004414190 Detail

MBM29PL3200TE: Features: • 0.23 m Process Technology• Single 3.0 V read, program and erase Minimized system level power requirements• High Performance Page Mode 25 ns maximum page access time (70...

MBM29PL3200TE Data Sheet

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Part Number:
MBM29PL3200TE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• 0.23 m Process Technology
• Single 3.0 V read, program and erase Minimized system level power requirements
• High Performance Page Mode 25 ns maximum page access time (70 ns random access time)
• 8 words Page ( ´ 16) /4 double words ( ´ 32) size
• Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts 90-pin SSOP (Package suffix : PFV) 84-ball FBGA (Package suffix : PBT)
• Minimum 100,000 program/erase cycles
• Sector erase architecture


Pinout

Connection Diagram


Description

The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits
each or 1 M words of 32 bits each. The device is offered in 90-pin SSOP and 84-ball FBGA packages. This device
is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC
are not required for write or erase operations. MBM29PL3200TE can also be reprogrammed in standard EPROM  ogrammers.




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