MBM29PL12LM

• 0.23 m Process Technology
• Single 3.0 V read, program and erase
   Minimizes system level power requirements
• Industry-standard pinouts
   56-pin TSOP (1)
   80-ball FBGA (Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance Page mode
   Fast 8 bytes / 4 words access capabililty
• Sector erase architecture
   256 * 64K byte and 32K word sectors
   Any combination of sectors can be concurrently erased. Also supports full chip erase
• HiddenROM
   256 bytes / 128 words of HiddenROM, accessible through a "HiddenROM Entry" command sequence
   Factory serialized and protected to provide a secure electronic serial number (ESN)
•WP/ACC input pin:  At VIL, allows protection of outermost two 8K bytes / 4K words sectors, regardless of    sector protection/unprotection status
  At VACC, increases program performance
• Embedded EraseTM* Algorithms
   Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM* Algorithms
   Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
   Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
   When addresses remain stable, automatically switches themselves to low power mode
• Erase Suspend/Resume
   Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Low VCC write inhibit 2.5 V
• Sector Group Protection
   Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector protect command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
   Temporary sector group unprotection via the RESET pin
   This feature allows code changes in previously locked sectors
• In accordance with CFI (Common Flash Memory Interface)