Features: • 0.23 µm Process Technology• Single 3.0 V read, program and erase Minimizes system level power requirements• Compatible with JEDEC-standards Uses same software commands with single-power supply Flash• Address don't care during the command sequence•...
MBM29LV652UE -90: Features: • 0.23 µm Process Technology• Single 3.0 V read, program and erase Minimizes system level power requirements• Compatible with JEDEC-standards Uses same software...
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Parameter |
Symbol |
Rating |
Unit | |
Min. |
Max. | |||
Storage Temperature |
Tstg |
55 |
+125 |
°C |
Ambient Temperature with Power Applied |
TA |
40 |
+85° |
°C |
Voltage with Respect to Ground All Pins Except A9, OE, ACC and RESET(Note 1) |
VIN, VOUT |
0.5 |
VCC +0.5 |
V |
Power Supply Voltage
(Note 1) |
VCC |
0.5 |
+4.0 |
V |
A9, OE, ACC, and RESET
(Note 2 |
VIN |
0.5 |
+13.0 |
V |
Power Supply Voltage |
VCCq |
0.2 |
+7.0 |
V |
The MBM29LV652UE -90 is entirely command set compatible with JEDEC single-power-supply Flash standard.Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations.
Typically, each sector can be programmed and verified in about 0.5 seconds.
A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The device also features a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29LV652UE -90 is erased when shipped from the factory
Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7, by the Toggle Bit feature on DQ6. Once the end of a program or erase cycle has been completed, the devices internally reset to the read mode.
MBM29LV652UE -90 electrically erase all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The words are programmed one word at a time using the EPROM programming mechanism of hot electron injection.