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MBM29LV650UE90

Features: • 0.23 mm Process Technology• Single 3.0 V read, program and erase Minimizes system level power requirements• Compatible with JEDEC-standards Uses same software commands with single-power supply Flash• Address don't care during the command sequence• Industry...

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SeekIC No. : 004414167 Detail

MBM29LV650UE90: Features: • 0.23 mm Process Technology• Single 3.0 V read, program and erase Minimizes system level power requirements• Compatible with JEDEC-standards Uses same software commands ...

MBM29LV650UE90 Data Sheet

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Part Number:
MBM29LV650UE90
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• 0.23 mm Process Technology
• Single 3.0 V read, program and erase Minimizes system level power requirements
• Compatible with JEDEC-standards Uses same software commands with single-power supply Flash
• Address don't care during the command sequence
• Industry-standard pinouts 48-pin TSOP (1) (Package suffix: TN - Normal Bend Type, TR - Reversed Bend Type)
• Minimum 100,000 program/erase cycles
• High performance 90 ns maximum access time
• Flexible sector architecture 128 32 K word sectors Any combination of sectors can be concurrently erased.
Also supports full chip erase.
• HiddenROM region
-128 words of HiddenROM, accessible through a new "HiddenROM Enable" command sequence
-Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP input pin
-At VIL, allows protection of first or last 32 K word sector, regardless of sector protection/unprotection status
-At VIH, allows removal of protection
-MBM29LV650UE: has the function to protect the last 32 K word sector (SA 127).
-MBM29LV651UE: has the function to protect the first 32 K word sector (SA 0).
• ACC input pin At VACC, increases program performance
• Embedded EraseTM* Algorithms Automatically pre-programs and erases the chip or any sector
• Embedded programTM* Algorithms Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode When addresses remain stable, automatically switches themselves to low power mode
• Low VCC write inhibit £ 2.5 V
• Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector group protection Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector protect command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
-Temporary sector group unprotection via the RESET pin
-This feature allows code changes in previously locked sectors
• In accordance with CFI (Common Flash Memory Interface)


Pinout

Connection Diagram


Specifications

Parameter
Conditions
Rating
Units
Min
Max
Storage Temperature
Tstg
55
+125
°C
Ambient Temperature with Power Applied
TA
40
+85
°C
Voltage with Respect to Ground All Pins except
A9,OE, RESET *1, *2
VIN, VOUT
0.5
VCC+0.5
V
Power Supply Voltage *1
VCC
0.5
+4.0
V
A9, OE, and RESET *1, *3
VIN
0.5
+13.0
V
WP/ACC *1, *4
VACC
0.2
+7.0
V



Description

The MBM29LV650UE90 is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. MBM29LV650UE90 can also be reprogrammed in standard EPROM programmers.

To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable(OE) controls.




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