MBM29LV650UE-90/12

• 0.23 mm Process Technology
• Single 3.0 V read, program and erase
   Minimizes system level power requirements
• Compatible with JEDEC-standards
   Uses same software commands with single-power supply Flash
• Address don't care during the command sequence
• Industry-standard pinouts
   48-pin TSOP (I) (Package suffix: TN - Normal Bend Type, TR - Reversed Bend Type)
• Minimum 100,000 program/erase cycles
• High performance
   90 ns maximum access time
• Flexible sector architecture
   One hundred twenty-eight 32K word sectors Any combination of sectors can be concurrently erased. Also supports full chip erase
• Hidden ROM (Hi-ROM) region
  128 word of Hi-ROM, accessible through a new "Hi-ROM Enable" command sequence Factory serialized and protected to provide a secure electronic serial number (ESN)
•WP input pin
  At V_IL, allows protection of first or last 32K word sector, regardless of sector protection/unprotection status
  At V_IH, allows removal of protection
  MBM29LV650UE: has the function to protect the last 32K word sector (SA 127)
  MBM29LV651UE: has the function to protect the first 32K word sector (SA 0)
• ACC input pin
   At V_ACC, increases program performance
• Embedded EraseTM* Algorithms
   Automatically pre-programs and erases the chip or any sector
• Embedded programTM* Algorithms
   Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode
   When addresses remain stable, automatically switches themselves to low power mode
• Low V_CC write inhibit  2.5 V
• Erase Suspend/Resume
   Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector group protection
   Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector protect command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
   Temporary sector group unprotection via the RESET pin
   This feature allows code changes in previously locked sectors
• In accordance with CFI (Common Flash Memory Interface)
*: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

Notes: 1. Minimum DC voltage on input or l/O pins is -0.5 V. During voltage transitions, input or I/O pins may undershoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC voltage on input or l/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods of up to 20 ns.
2. Minimum DC input voltage on A₉, OE, A_CC, and RESET pins is 0.5 V. During voltage transitions, A₉,OE, A_CC, and RESET pins may undershoot VSS to -2.0 V for periods of up to 20 ns. Voltage difference between input and supply voltage (V_IN-V_CC) does not exceed 9.0 V. Maximum DC input voltage on A₉,OE, A_CC, and RESET pins is +13.0 V which may overshoot to +14.0 V for periods of up to 20 ns.

The MBM29LV650UE-90/12 is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls.

The MBM29LV650UE-90/12 is entirely command set compatible with JEDEC single-power-supply Flash standard.Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations.Typically, each sector can be programmed and verified in about 0.5 seconds.