MBM29LV650UE-12

Features:

• 0.23 µm Process Technology
• Single 3.0 V read, program and erase
  Minimizes system level power requirements
• Compatible with JEDEC-standards
   Uses same software commands with single-power supply Flash
• Address don't care during the command sequence
• Industry-standard pinouts
   48-pin TSOP (I) (Package suffix: TN - Normal Bend Type, TR - Reversed Bend Type)
• Minimum 100,000 program/erase cycles
• High performance
   90 ns maximum access time
• Flexible sector architecture
   One hundred twenty-eight 32K word sectors
   Any combination of sectors can be concurrently erased. Also supports full chip erase
• Hidden ROM (Hi-ROM) region
   128 word of Hi-ROM, accessible through a new "Hi-ROM Enable" command sequence
   Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP input pin
   At V_IL, allows protection of first or last 32K word sector, regardless of sector protection/unprotection status
   At V_IH, allows removal of protection
   MBM29LV650UE: has the function to protect the last 32K word sector (SA 127)
   MBM29LV651UE: has the function to protect the first 32K word sector (SA 0)
• ACC input pin
   At V_ACC, increases program performance
• Embedded Erase^TM* Algorithms
   Automatically pre-programs and erases the chip or any sector
• Embedded program^TM* Algorithms
   Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Automatic sleep mode
   When addresses remain stable, automatically switches themselves to low power mode
• Low V_CC write inhibit 2.5 V
• Erase Suspend/Resume
   Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector group protection
   Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector protect command
• Fast Programming Function by Extended Command
• Temporary sector group unprotection
   Temporary sector group unprotection via the RESETpin
   This feature allows code changes in previously locked sectors
• In accordance with CFI (Common Flash Memory Interface)


Pinout




Specifications

Parameter	Symbol	Rating		Unit
		Min.	Max.
Storage Temperature	Tstg	55	+125	°C
Ambient Temperature with Power Applied	TA	40	+85	°C
Voltage with Respect to Ground All Pins Except A9, OE, ACC, and RESET (Note 1)	VIN, VOUT	0.5	VCC+0.5	V
Power Supply Voltage (Note 1)	VCC	0.5	+4.0	V
A9, OE, ACC, and RESET (Note 2	VIN	0.5	+13.0	V
Power Supply Voltage	VCCq	0.2	+7.0	v

Description

The MBM29LV650UE-12 is a 64M-bit, 3.0 V-only Flash memory organized as 4M words of 16 bits each. The device is designed to be programmed in system with the standard system 3.0 V V_CC supply. 12.0 V V_PP and  5.0 V V_CC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.

To eliminate bus contention the devices have separate chip enable ( CE ), write enable (WE), and output enable(OE ) controls.

The MBM29LV650UE-12 is entirely command set compatible with JEDEC single-power-supply Flash stan-dard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations.  Typically, each sector can be programmed and verified in about 0.5 seconds.

A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.) The device also features a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29LV650UE/651UE is erased when shipped from the factory.

Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ₇, by the Toggle Bit feature on DQ₆. Once the end of a program or erase cycle has been completed, the devices internally reset to the read mode.

MBM29LV650UE-12 electrically erase all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The words are programmed one word at a time using the EPROM programming mechanism of hot electron injection.