Features: • 0.23 mm Process Technology• Single 3.0 V Read, Program, and Erase Minimized system level power requirements• Compatible with JEDEC-standard Commands Use the same software commands as E2PROMs• Compatible with JEDEC-standard Worldwide Pinouts-48-pin TSOP (1) (Pack...
MBM29LV320TE 80: Features: • 0.23 mm Process Technology• Single 3.0 V Read, Program, and Erase Minimized system level power requirements• Compatible with JEDEC-standard Commands Use the same softwa...
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Parameter |
Conditions |
Rating |
Units | |
Min |
Max | |||
Storage Temperature |
Tstg |
55 |
+125 |
°C |
Ambient Temperature with Power Applied |
TA |
40 |
+85 |
°C |
Voltage with Respect to Ground All Pins except A9, OE, RESET *1, *2 |
VIN, VOUT |
0.5 |
VCC+0.5 |
V |
Power Supply Voltage *1 |
VCC |
0.5 |
+4.0 |
V |
A9, OE, and RESET *1, *3 |
VIN |
0.5 |
+13.0 |
V |
WP/ACC *1, *4 |
VACC |
0.5 |
+10.5 |
V |
The MBM29LV320TE 80 is 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. The device is offered in a 48-pin TSOP (1) and 63-ball FBGA packages. MBM29LV320TE 80 is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers.
The standard device offers access times 80 ns, 90 ns and 100 ns, allowing operation of high-speed microprocessors without wait state. To eliminate bus contention the device has separate chip enable(CE), write enable(WE) and output enable (OE) controls.