MBM29LV160TE

`  0.23 m m Process Technology
`  Single 3.0 V read, program and erase
   Minimizes system level power requirements
`  Compatible with JEDEC-standard commands
   Uses same software commands as E<sup>2</sup> PROMs
`  Compatible with JEDEC-standard world-wide pinouts
   48-pin TSOP (I) (Package suffix: TN-Normal Bend Type, TR-Reversed Bend Type)
   48-pin CSOP  (Package suffix: PCV)
   48-ball FBGA (Package suffix: PBT)
`  Minimum 100,000 program/erase cycles
`  High performance
   70 ns maximum access time
`  Sector erase architecture
   One 8K word, two 4K words, one 16K word, and  thirty-one 32K words  sectors in word mode One 16K byte, two 8K bytes, one 32K byte, and  thirty-one 64K bytes sectors in byte mode Any combination of sectors can be concurrently erased. Also supports full chip erase
`  Boot Code Sector Architecture
   T = Top sector
   B = Bottom sector
`  Embedded Erase<sup>TM</sup>  Algorithms
   Automatically pre-programs and erases the chip or any sector
`  Embedded Program^TM  Algorithms
   Automatically programs and verifies data at specified address
`  Data Polling and Toggle Bit feature for detection of program or erase cycle completion
`  Ready/Busy output (RY/BY)
   Hardware method for detection of program or erase cycle completion
`  Automatic sleep mode
   When addresses remain stable, automatically switches themselves to low power mode
`  Low VCC write inhibit   2.5 V
`  Erase Suspend/Resume
   Suspends the erase operation to allow a read data and/or program in another sector within the same device
`  Sector protection
   Hardware method disables any combination of sectors from program or erase operations
`  Sector Protection Set function by Extended sector Protection command
`  Fast Programming Function by Extended command
`  Temporary sector unprotection
   Temporary  sector unprotection via the RESET pin
`  In accordance with CFI ( Common Flash Memory Interface)

Notes: 1. Minimum DC voltage on input or l/O pins are 0.5 V. During voltage transitions, inputs may negative overshoot VSS to 2.0 V for periods of up to 20 ns. Maximum DC voltage on output and l/O pins are V_CC +0.5 V.

During voltage transitions,outputs may positive overshoot to VCC +2.0 V for periods of up to 20 ns.

2. Minimum DC input voltage on A₉, OE, and RESET pins are 0.5 V. During voltage transitions, A₉, OE, and RESET pins may negative overshoot VSS to 2.0 V for periods of up to 20 ns. Maximum DC input voltage on A₉, OE, and RESET
 pins are +13.0 V which may positive overshoot to 14.0 V for periods of up to 20 ns. Voltage difference between input voltage and supply voltage (V_IN V_CC) do not exceed 9 V.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,  temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP  and 48-ball FBGA packages. The device is designed to be programmed in-system with the standard system 3.0 V V_CC supply. 12.0 V V_PP and 5.0 V V_CC are not required for write or erase operations. The device can also be reprogrammed in tandard EPROM programmers.

The standard MBM29LV160TE/BE offers access times of 70 ns, 90 ns and 120 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls.

The MBM29LV160TE/BE is pin and command set compatible with JEDEC standard E²PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices.

The MBM29LV160TE/BE is programmed by executing the program command sequence. This will invoke the Embedded Program^TM*  Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margins. Typically, each sector can be programmed and verified in about 0.5 seconds.

Erase is accomplished by executing the erase command sequence. This will invoke the Embedded EraseTM* Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed before xecuting the erase operation. During erase, MBM29LV160TE automatically times the erase pulse widths and verifies proper cell margins.

Any individual sector is typically erased and verified in 1.0 second. (If already  preprogrammed.)within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM programming mechanism of hot electron injection.
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