MBM29LV004BC

* Single 3.0 V read, program, and erase
Minimizes system level power requirements
* Compatible with JEDEC-standard commands

Uses same software commands as E² PROMs
* Compatible with JEDEC-standard world-wide pinouts
40-pin TSOP(I) (Package suffix: PTN Normal Bend Type, PTR Reversed Bend Type)
40-pin SON (Package suffix: PNS)
* Minimum 100,000 program/erase cycles
* High performance
70 ns maximum access time
* Sector erase architecture
One 16K byte, two 8K bytes, one 32K byte, and seven 64K bytes
Any combination of sectors can be concurrently erased. Also supports full chip erase
* Boot Code Sector Architecture
T = Top sector
B = Bottom sector

* Embedded Erase^TM  Algorithms
Automatically pre-programs and erases the chip or any sector

* Embedded Program  Algorithms
Automatically writes and verifies data at specified address
*Data Polling and Toggle Bit feature for detection of program or erase cycle completion
* Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
* Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode
*Low VCC write inhibit   2.5 V
* Erase Suspend/Resume
Suspends the erase operation to allow a read data in another sector within the same device
* Sector protection
Hardware method disables any combination of sectors from program or erase operations
* Sector Protection Set function by Extended sector protection command
* Temporary sector unprotection
Temporary sector unprotection via the RESET pin

Storage Temperature.............................................................................................55°C to +125°C
Ambient Temperature with Power Applied ...............................................................40°C to +85°C
Voltage with respect to Ground All pins except A9, OE and RESET (Note 1)..........0.5 V to VCC+0.5 V
V_CC (Note 1) ...............................................................................................................0.5 V to +5.5 V
A9, OE, and RESET (Note 2)......................................................................................0.5 V to +13.0 V

Ambient Temperature (TA)..........................................................................................40°C to +85°C
V_CC Supply Voltages
MBM29LV004TC/BC-70.....................................................................................................+3.0V to +3.6 V
MBM29LV004TC/BC-90/-12..............................................................................................+2.7 V to +3.6 V

The MBM29LV004BC are a 4M-bit, 3.0 V-only Flash memory organized as 512K bytes of 8 bits each. The MBM29LV004TC/BC are offered in a 40-pin TSOP(I) and 40-pin SON packages. These devices are designed  to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required  for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.
The standard MBM29LV004BC offer access times 70 ns and 120 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE),  write enable (WE), and output enable (OE) controls.
The MBM29LV004BC are pin and command set compatible with JEDEC standard E PROMs. Commands  are written to the command register using standard microprocessor write timings. Register contents serve as  input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally  latch addresses and data needed for the programming and erase operations. Reading data out of the devices  is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29LV004BC are programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths  and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds.  Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase  Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed  before executing the erase operation. During erase, the devices automatically time the erase pulse widths and  verify proper cell margin.

Any individual sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
MBM29LV004BC also feature a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29LV004TC/BC are erased when shipped from the  factory.
The devices feature single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V_CC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7,  by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been completed, the devices internally reset to the read mode.
Fujitsu's Flash technology combines years of EPROM and E PROM experience to produce the highest levels  of quality, reliability, and cost effectiveness. The MBM29LV004TC/BC memories electrically erase the entire chip  or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes are programmed one byte  at a time using the EPROM programming mechanism of hot electron injection.