MBM29F800TA70

Features:

• Single 5.0 V read, write, and erase
   Minimizes system level power requirements
• Compatible with JEDEC-standard commands
   Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts
   48-pin TSOP(I) (Package suffix: PFTN Normal Bend Type, PFTR Reversed Bend Type)
   44-pin SOP (Package suffix: PF)
• Minimum 100,000 write/erase cycles
• High performance
   55 ns maximum access time
• Sector erase architecture
   One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes.
   Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
   T = Top sector
   B = Bottom sector
• Embedded EraseTM Algorithms
   Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
   Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/ BY)
   Hardware method for detection of program or erase cycle completion
• Low Vcc write inhibit 3.2 V
• Erase Suspend/Resume
   Suspends the erase operation to allow a read data in another sector within the same device
• Hardware RESETpin
   Resets internal state machine to the read mode
• Sector protection
   Hardware method disables any combination of sectors from write or erase operations
• Temporary sector unprotection
   Temporary sector unprotection via the RESETpin.


Pinout




Specifications

Storage Temperature ....................................................................................................55°C to +125°C
Ambient Temperature with Power Applied .......................................................................40°C to +85°C
Voltage with respect to Ground All pins except A₉, OE, and OE (Note 1) ...........................2.0 V to +7.0 V
V_CC (Note 1) .......................................................................................................................2.0 V to +7.0 V
A₉, OE, and RESET (Note 2) ..............................................................................................2.0 V to +13.5 V


Description

The MBM29F800TA70 is a 8M-bit, 5.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29F800TA/BA is offered in a 48-pin TSOP(I) and 44-pin SOP packages. This device is designed to be programmed in-system with the standard system 5.0 V VCC supply. 12.0 V VPP is not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. The standard MBM29LV800TA/BA offers access times 55 ns and 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable ( OE) controls.

The MBM29F800TA70 is pin and command set compatible with JEDEC standard E²PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the devices is similar to reading from12.0 V Flash or EPROM devices.

The MBM29F800TA70 is programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Typically, each sector can be programmed and verified in less than 0.5 seconds. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin.

Any individual sector is typically erased and verified in 1.0 second (if already completely preprogrammed.).

The devices also features a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29F800TA70 is erased when shipped from the factory.

The devices features single 5.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ₇, by the Toggle Bit feature on DQ₆, or the RY/BYoutput pin. Once the end of a program or erase cycle has been completed, the device internally resets to the read mode.

Fujitsu's Flash technology combines years of EPROM and E²PROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The MBM29F800TA70 memory electrically erase the entire chip or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM programming mechanism of hot electron injection.