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MBM29DS163TE/BE10

Features: • 0.23 mm Process Technology• Simultaneous Read/Write Operations (Dual Bank)-Host system can program or erase in one bank, and then read immediately and simultaneously from the-bank with zero latency between read and write operations-Read-while-erase-Read-while-program•...

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SeekIC No. : 004414093 Detail

MBM29DS163TE/BE10: Features: • 0.23 mm Process Technology• Simultaneous Read/Write Operations (Dual Bank)-Host system can program or erase in one bank, and then read immediately and simultaneously from the...

MBM29DS163TE/BE10 Data Sheet

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Part Number:
MBM29DS163TE/BE10
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• 0.23 mm Process Technology
• Simultaneous Read/Write Operations (Dual Bank)
-Host system can program or erase in one bank, and then read immediately and simultaneously from the
-bank with zero latency between read and write operations
-Read-while-erase
-Read-while-program
• Single 1.8 V Read, Program, and Erase Minimized system level power requirements
• Compatible with JEDEC-standard Commands Use the same software commands as E2PROMs
• Compatible with JEDEC-standard Worldwide Pinouts
-48-pin TSOP (1) (Package suffix : TN - Normal Bend Type, TR - Reversed Bend Type)
-48-ball FBGA (Package suffix : PBT)
• Minimum 100,000 Program/Erase Cycles
• High Performance 100 ns maximum access time
• Sector Erase Architecture
-Eight 4 K word and thirty-one 32 K word sectors in word mode
-Eight 8 K byte and thirty-one 64 K byte sectors in byte mode
-Any combination of sectors can be concurrently erased. Also supports full chip erase.
• Boot Code Sector Architecture
-T = Top sector
-B = Bottom sector
• HiddenROM Region
-64 K byte of HiddenROM, accessible through a new "HiddenROM Enable" command sequence
-Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC Input Pin
-At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status
-At VIH, allows removal of boot sector protection
-At VACC, increases program performance
• Embedded EraseTM* Algorithms Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM* Algorithms Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic Sleep Mode When addresses remain stable, automatically switch themselves to low power mode.
• Program Suspend/Resume
• Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device
• Sector Group Protection Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector group protection command
• Fast Programming Function by Extended Command
• Temporary Sector Group Unprotection Temporary sector group unprotection via the RESET pin.


Pinout

Connection Diagram


Specifications

Parameter
Conditions
Rating
Units
Min
Max
Storage Temperature
Tstg
55
+125
°C
Ambient Temperature with Power Applied
TA
40
+85
°C
Voltage with Respect to Ground All Pins except
A9, OE, RESET *1, *2
VIN, VOUT
0.5
VCC+0.5
V
Power Supply Voltage *1
VCC
0.5
+3.0
V
A9, OE, andRESET *1, *3
VIN
0.5
+11.5
V



Description

The MBM29DS163TE/BE10 is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (1) and 48-ball FBGA packages. This device is designed to be programmed in system with standard system 1.8 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. MBM29DS163TE/BE10 can also be reprogrammed in standard EPROM programmers.




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