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MBM29DL32TF/BF

Features: • 0.17 mm Process Technology• Two-bank Architecture for Simultaneous Read/Program and Read/Erase• FlexBankTM-Bank A : 4 Mbit (8 KB ´ 8 and 64 KB ´ 7)-Bank B : 12 Mbit (64 KB ´ 24)-Bank C : 12 Mbit (64 KB ´ 24)-Bank D : 4 Mbit (64 KB ´ 8)-Tw...

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SeekIC No. : 004414072 Detail

MBM29DL32TF/BF: Features: • 0.17 mm Process Technology• Two-bank Architecture for Simultaneous Read/Program and Read/Erase• FlexBankTM-Bank A : 4 Mbit (8 KB ´ 8 and 64 KB ´ 7)-Bank B :...

MBM29DL32TF/BF Data Sheet

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Part Number:
MBM29DL32TF/BF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

• 0.17 mm Process Technology
• Two-bank Architecture for Simultaneous Read/Program and Read/Erase
• FlexBankTM
-Bank A : 4 Mbit (8 KB ´ 8 and 64 KB ´ 7)
-Bank B : 12 Mbit (64 KB ´ 24)
-Bank C : 12 Mbit (64 KB ´ 24)
-Bank D : 4 Mbit (64 KB ´ 8)
-Two virtual Banks are chosen from the combination of four physical banks (Refer to "FlexBankTM Architecture
-Table" and "Example of Virtual Banks Combination Table" in nFUNCTIONAL DESCRIPTION)
-Host system can program or erase in one bank, and then read immediately and simultaneously from the other
-bank with zero latency between read and write operations.
-Read-while-erase
-Read-while-program
• Single 3.0 V Read, Program, and Erase Minimizes system level power requirements
• Compatible with JEDEC-standard Commands Uses same software commands as E2PROMs
• Compatible with JEDEC-standard World-wide Pinouts
-48-pin TSOP (1) (Package suffix : TN - Normal Bend Type)
-48-ball FBGA (Package suffix : PBT)
• Low VCC write inhibit £ 2.5 V
• Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same
• Sector Group Protection Hardware method disables any combination of sector groups from program or erase operations
• Sector Group Protection Set function by Extended sector group protection command
• Fast Programming Function by Extended Command
• Temporary Sector Group Unprotection Temporary sector group unprotection via the RESET pin.
• In accordance with CFI (Common Flash Memory Interface)
• Minimum 100,000 Program/Erase Cycles
• High Performance 70 ns maximum access time
• Sector Erase Architecture
-Eight 4 K word and sixty-three 32 K word sectors in word mode
-Eight 8 K byte and sixty-three 64 K byte sectors in byte mode
-Any combination of sectors can be concurrently  erased. Also supports full chip erase.
• Boot Code Sector Architecture T = Top sector B = Bottom sector
• HiddenROM Region 256 byte of HiddenROM, accessible through a new "HiddenROM Enable" command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
• WP/ACC Input Pin At VIL, allows protection of "outermost" 2 ´ 8 bytes on boot sectors, regardless of sector group protection/ unprotection status. At VACC, increases program performance
• Embedded EraseTM* Algorithms Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM* Algorithms Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy Output (RY/BY) Hardware method for detection of program or erase cycle completion
• Automatic Sleep Mode


Specifications

Parameter
Conditions
Rating
Units
Min
Max
Storage Temperature
Tstg
55
+125
°C
Ambient Temperature with Power Applied
TA
40
+85
°C
Voltage with Respect to Ground All Pins except
A9, OE, RESET *1, *2
VIN, VOUT
0.5
VCC+0.5
V
Power Supply Voltage *1
VCC
0.5
+4.0
V
A9, OE, and RESET *1, *3
VIN
0.5
+13.0
V
WP/ACC *1, *4
VACC
0.5
+10.5
V



Description

The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers.




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