MB2821

Features:

• 20-bit positive-edge triggered register
• Multiple VCC and GND pins minimize
   switching noise
• Live insertion/extraction permitted
• Power-up reset
• Power-up 3-State
• Output capability: +64mA/32mA
• Latch-up protection exceeds 500mA per
  Jedec JC40.2 Std 17
• ESD protection exceeds 2000V per MIL
  STD 883 Method 3015 and 200V per
  Machine Model


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
VCC	DC supply voltage		0.5 to +7.0	V
IIK	DC input diode current	VI < 0	18	mA
VI	DC input voltage3		1.2 to +7.0	V
IOK	DC output diode current	VO < 0	50	mA
VOUT	DC output voltage3	output in Off or High state	0.5 to +5.5	V
IOUT	DC output current	output in Low state	128	mA
Tstg	Storage temperature range		65 to 150	°C

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.


Description

The MB2821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.

The MB2821 has two 10-bit, edge triggered registers, with each register coupled to ten 3-State output buffers. The two sections of each register are controlled independently by the clock (nCP) and Output Enable (nOE) control gates.

Each register of MB2821 is fully edge triggered. The state of each D input, one set-up time before the Low-to-High clock transition, is transferred to the corresponding flip-flop's Q output.

The 3-State output buffers of MB2821 are designed to drive heavily loaded 3-State buses, MOS memories, or MOS microprocessors.

The active Low Output Enable (nOE) of MB2821 controls all ten 3-State buffers independent of the register operation. When nOE is Low, the data in the register appears at the outputs.

When nOE is High, the outputs of MB2821 are in high impedance "off" state, which means they will neither drive nor load the bus.