MB2374

Features:

• Two 8-bit positive edge triggered registers
• Live insertion/extraction permitted
• Power-up 3-State
• Power-up reset
• Multiple V_CC and GND pins minimize switching noise
• 3-State output buffers
• Output capability: +64mA/32mA
• Latch-up protection exceeds 500mA per Jedec Std 17
• ESD protection exceeds 2000V per MIL STD 883 Method 3015
   and 200V per Machine Model


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
VCC	DC supply voltage		0.5 to +7.0	V
IIK	DC input diode current	VI < 0	18	mA
VI	DC input voltage3		1.2 to +7.0	V
IOK	DC output diode current	VO < 0	50	mA
VOUT	DC output voltage3	output in Off or High state	0.5 to +5.5	V
IOUT	DC output current	output in Low state	128	mA
Tstg	Storage temperature range		65 to 150	°C

NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.


Description

The MB2374 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.

The MB2374 has two 8-bit, edge triggered registers, with each register coupled to eight 3-State output buffers. The two sections of each register are controlled independently by the clock (nCP) and Output Enable (nOE) control gates.

Each register of MB2374 is fully edge triggered. The state of each D input, one set-up time before the Low-to-High clock transition, is transferred to the corresponding flip-flop's Q output.

The 3-State output buffers of MB2374 are designed to drive heavily loaded 3-State buses, MOS memories, or MOS microprocessors. Each active-Low Output Enable (nOE) controls all eight 3-State buffers for its register independent of the clock operation.

When nOE is Low, the stored data appears at the outputs for that register. When nOE is High, the outputs for that register of MB2374 are in the High-impedance "OFF" state, which means they will neither drive nor load the bus.