MB2373

Features:

• 16-bit transparent latch
• Multiple V_CC and GND pins minimize switching noise
• Power-up 3-State
• Live insertion/extraction permitted
• Power-up reset
• 3-State output buffers
• Output capability: +64mA/32mA
• Latch-up protection exceeds 500mA per JEDEC JC40.2 Std 17
• ESD protection exceeds 2000V per MIL STD 883 Method 3015 and 200V per Machine Model


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
VCC	DC supply voltage		0.5 to +7.0	V
IIK	DC input diode current	VI < 0	18	mA
VI	DC input voltage3		1.2 to +7.0	V
IOK	DC output diode current	VO < 0	50	mA
VOUT	DC output voltage3	output in Off or High state	0.5 to +5.5	V
IOUT	DC output current	output in Low state	128	mA
Tstg	Storage temperature range		65 to 150	°C

NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.


Description

The MB2373 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive.

The MB2373 device is a dual octal transparent latch coupled to two sets of eight 3-State output buffers. The two sections of the device are controlled independently by Enable (nE) and Output Enable (nOE) control gates.

The data on each set of D inputs are transferred to the latch outputs when the Latch Enable (nE) input is High. The MB2373 remains transparent to the data inputs while nE is High, and stores the data that is present one setup time before the High-to-Low enable transition.

The MB2373 is designed to drive heavily loaded 3-State buses, MOS memories, or MOS microprocessors. Each active-Low Output Enable (nOE) controls eight 3-State buffers independent of the latch operation.

When nOE is Low, the latched or transparent data appears at the outputs. When nOE is High, the outputs of MB2373 are in the Highimpedance "OFF" state, which means they will neither drive nor load the bus.