MAPR-000912-500S00, US $ 428.54-436.78 , M/A-COM Technology Solutions, MAPR-000912-500S00 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00219809 Detail

MAPR-000912-500S00: Transistors RF MOSFET Power 960-1215MHz 500W Gain: 9.0dB min

MAPR-000912-500S00 Data Sheet

US $ 428.54~436.78 / Piece | Get Latest Price

Part Number:: MAPR-000912-500S00
Mfg:: M/A-COM Technology Solutions
Supply Ability:: 5000

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Unit Price
$436.78
$428.54

Processing time
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15 Days

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Upload time: 2024/11/27

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Recent History
What is this?

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Features: • NPN Silicon Microwave Power Transistors • Common Base Configuration •...
MAPR-002729-170M00 evaluate
US $308.54 - 314.47 / Piece

Transistors RF MOSFET Power 2.7-2.9GHz Gain8.5dB 170W VSWR: 2.1
MAPR-002731-115M00 evaluate
US $199.64 - 208.28 / Piece

Transistors RF MOSFET Power 2.7-2.9GHz Gain7.6dB 115W VSWR: 2.1

Product Details

Quick Details

Packaging :

Bulk

Description

Configuration :
Transistor Polarity :
Frequency :
Gain :
Output Power :
Drain-Source Breakdown Voltage :
Continuous Drain Current :
Gate-Source Breakdown Voltage :
Maximum Operating Temperature :
Package / Case :
Packaging : Bulk

Features:

• NPN Silicon Microwave Power Transistors
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Inter digitized Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metallization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package
• RoHS Compliant

Specifications

Symbol	Parameter	Ratings	Units
V_CES	Collector-Emitter Voltage	80	V
V_EBO	Emitter-Base Voltage	3.0	V
I_C	Collector Current (Peak)	52.5	A
P_TOT	Power Dissipation @ +25°C	2.2	kW
T_STG	Storage Temperature	-65 to +200
T_J	Junction Temperature	200

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MAPR-000912-500S00

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