Features: • NPN Silicon Microwave Power Transistors • Common Base Configuration • Broadband Class C Operation • High Efficiency Inter digitized Geometry • Diffused Emitter Ballasting Resistors • Gold Metallization System • Internal Input and Output Impedan...
MAPR-001011-850S00: Features: • NPN Silicon Microwave Power Transistors • Common Base Configuration • Broadband Class C Operation • High Efficiency Inter digitized Geometry • Diffused Emit...
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Transistors RF MOSFET Power 2.7-2.9GHz Gain8.5dB 170W VSWR: 2.1
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Transistors RF MOSFET Power 2.7-2.9GHz Gain7.6dB 115W VSWR: 2.1
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Transistors RF MOSFET Power 960-1215MHz 350W Gain: 9.4dB min
Symbol | Parameter | Ratings | Units |
VCES | Collector-Emitter Voltage | 80 | V |
VEBO | Emitter-Base Voltage | 3.0 | V |
IC | Collector Current (Peak) | 250 | A |
PTOT | Power Dissipation @ +25°C | 11.6 | kW |
TSTG | Storage Temperature | -65 to +200 | |
TJ | Junction Temperature | 200 |