Features: `HIGH SPEED: tPD = 21ns (TYP.) at VCC = 4.5V`LOW POWER DISSIPATION: ICC = 1mA(MAX.) at TA=25°C`COMPATIBLE WITH TTL OUTPUTS : VIH = 2V (MIN.) VIL = 0.8V (MAX)`BALANCED PROPAGATION DELAYS: tPLH tPHL`SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN)`PIN AND FUNCTION COMPATIBLE WITH 74 ...
M74HCT573: Features: `HIGH SPEED: tPD = 21ns (TYP.) at VCC = 4.5V`LOW POWER DISSIPATION: ICC = 1mA(MAX.) at TA=25°C`COMPATIBLE WITH TTL OUTPUTS : VIH = 2V (MIN.) VIL = 0.8V (MAX)`BALANCED PROPAGATION DELAYS: t...
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Symbol | Parameter | Value | Unit |
VCC | Supply Voltage | -0.5 to +7 | V |
VI | DC Input Voltage | -0.5 to VCC + 0.5 | V |
VO | DC Output Voltage | -0.5 to VCC + 0.5 | V |
IIK | DC Input Diode Current | ± 20 | mA |
IOK | DC Output Diode Current | ± 20 | mA |
IO | DC Output Current | ± 35 | mA |
ICC or IGND | DC VCC or Ground Current | ± 70 | mA |
PD | Power Dissipation | 500(*) | mW |
Tstg | Storage Temperature | -65 to +150 | °C |
TL | Lead Temperature (10 sec) | 300 | °C |
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
The M74HCT573 is an high speed CMOS OCTAL LATCH WITH 3-STATE OUTPUTS fabricated with silicon gate C2MOS technology.
This 8-BIT D-Type latches is controlled by a latch enable input (LE) and output enable input (OE). While the LE input is held at a high level, the Q outputs will follow the data input precisely. When the LE is taken low, the Q outputs will be latched precisely at the logic level of D input data.
While the OE input is at low level, the eight outputs will be in a normal logic state (high or low logic level) and while OE is at high level the outputs will be in a high impedance state. The 3-State output configuration and the wide choice of outline make bus organized system simple.
The M74HCT573 is designed to directly interface HSC2MOS systems with TTL and NMOS components.
All inputs are equipped with protection circuits against static discharge and transient excess voltage.