Features: ` HIGH SPEED: tPD = 20 ns (TYP.) at VCC = 4.5V` LOWPOWER DISSIPATION: ICC = 1 A (MAX.) at TA =25 oC` OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS` HIGH NOISE IMMUNITY VH (TYP.) = 0.71VAT VCC = 4.5V` SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL =4 mA (MIN)` BALANCED PROPAGATIONDELAYS: tPLH tPHL` ...
M74HCT132: Features: ` HIGH SPEED: tPD = 20 ns (TYP.) at VCC = 4.5V` LOWPOWER DISSIPATION: ICC = 1 A (MAX.) at TA =25 oC` OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS` HIGH NOISE IMMUNITY VH (TYP.) = 0.71VAT VCC = 4...
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Symbol |
Parameter |
Value |
Unit |
VCC |
Supply Voltage |
-0.5to + 7.0 |
V |
VI |
DC Input Voltage |
-0.5toVCC+0.5 |
V |
VO |
DC Output Voltage |
-0.5toVCC+0.5 |
V |
IIK |
DC Input Diode Current |
± 20 |
mA |
IOK |
DC Output Diode Current |
± 20 |
mA |
IO |
DC Output Current |
± 25 |
mA |
ICC or IGND |
DC VCC or Ground Current |
± 50 |
mA |
PD |
Power Dissipation |
500 (*) |
mW |
Tstg |
Storage Temperature |
-65 to+150 |
°C |
TL |
Lead Temperature (10 sec) |
300 |
°C |
AbsoluteMaximumRatings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
(*)500mW: 65 oC derate 300 mW by 10 mW/oC: 65 oC to80oC
The M74HCT132 is a high speed CMOS QUAD 2-INPUT SCHMITT NAND GATE fabricated in silicon gate C2MOS tecnology. It has the same high speed performance of LSTTL combined with true COMS low power consumption. Pin configuration and function are identical to those of the M74HCT00.
The hysteresis characteristics (around 15% VCC) of all inputs allow slowly charging input signals to be transformed into sharply defined jitter-free output signals.
All inputs of M74HCT132 are equipped with protection circuits against static discharge and transient excess voltage.