Features: `HIGH SPEED: tPD = 14ns (TYP.) at VCC = 4.5V`LOW POWER DISSIPATION: ICC = 1mA(MAX.) at TA=25°C`COMPATIBLE WITH TTL OUTPUTS : VIH = 2V (MIN.) VIL = 0.8V (MAX)`BALANCED PROPAGATION DELAYS: tPLH tPHL`SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 4mA (MIN)`PIN AND FUNCTION COMPATIBLE WITH 74 ...
M74HCT10: Features: `HIGH SPEED: tPD = 14ns (TYP.) at VCC = 4.5V`LOW POWER DISSIPATION: ICC = 1mA(MAX.) at TA=25°C`COMPATIBLE WITH TTL OUTPUTS : VIH = 2V (MIN.) VIL = 0.8V (MAX)`BALANCED PROPAGATION DELAYS: t...
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Symbol | Parameter | Value | Unit |
VCC | Supply Voltage | -0.5 to +7 | V |
VI | DC Input Voltage | -0.5 to VCC + 0.5 | V |
VO | DC Output Voltage | -0.5 to VCC + 0.5 | V |
IIK | DC Input Diode Current | ± 20 | mA |
IOK | DC Output Diode Current | ± 20 | mA |
IO | DC Output Current | ± 25 | mA |
ICC or IGND | DC VCC or Ground Current | ± 50 | mA |
PD | Power Dissipation | 500(*) | mW |
Tstg | Storage Temperature | -65 to +150 | °C |
TL | Lead Temperature (10 sec) | 300 | °C |
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
The M74HCT10 is an high speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology.
The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output.
The M74HCT10 is designed to directly interface HSC2MOS systems with TTL and NMOS components.
All inputs are equipped with protection circuits against static discharge and transient excess voltage.