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M74HCT08

Features: `HIGH SPEED tPD = 13 ns (TYP.) AT VCC = 4.5 V` LOWPOWER DISSIPATION ICC = 4 mA (MAX.) at TA = 25 °C`HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) `OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS `SYMMETRICAL OUTPUT IMPEDANCE |IOH| = IOL = 4 mA (MIN.) `BALANCEDPROPAGATION DELAYS tPLH tPHL`PIN...

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SeekIC No. : 004407225 Detail

M74HCT08: Features: `HIGH SPEED tPD = 13 ns (TYP.) AT VCC = 4.5 V` LOWPOWER DISSIPATION ICC = 4 mA (MAX.) at TA = 25 °C`HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) `OUTPUT DRIVE CAPABILITY 10 LSTTL LOAD...

M74HCT08 Data Sheet

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Part Number:
M74HCT08
Supply Ability:
5000

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Product Details

Description



Features:

`HIGH SPEED
  tPD = 13 ns (TYP.) AT VCC = 4.5 V
` LOWPOWER DISSIPATION
  ICC = 4 mA (MAX.) at TA = 25 °C
`HIGH NOISE IMMUNITY
  VNIH = VNIL = 28 % VCC (MIN.)
`OUTPUT DRIVE CAPABILITY
  10 LSTTL LOADS
`SYMMETRICAL OUTPUT IMPEDANCE
  |IOH| = IOL = 4 mA (MIN.)
`BALANCEDPROPAGATION DELAYS
  tPLH tPHL
`PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 08


Pinout

Connection Diagram


Specifications

Symbol Parameter Value Unit
VCC Supply Voltage -0.5 to +7 V
VI DC Input Voltage -0.5 to VCC + 0.5 V
VO DC Output Voltage -0.5 to VCC + 0.5 V
IIK DC Input Diode Current ± 20 mA
IOK DC Output Diode Current ± 20 mA
IO DC Output Current ± 25 mA
ICC or IGND DC VCC or Ground Current ± 50 mA
PD Power Dissipation 500(*) mW
Tstg Storage Temperature -65 to +150 °C
TL Lead Temperature (10 sec) 300 °C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C




Description

The M74HCT08 is an high speed CMOS QUAD 2-INPUT AND GATE fabricated with silicon gate C2MOS technology.

The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output.

The M74HCT08 is designed to directly interface HSC2MOS systems with TTL and NMOS components.

All inputs are equipped with protection circuits against static discharge and transient excess voltage.




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