Features: `HIGH SPEED tPD =12 ns (TYP.) AT VCC =6 V` LOWPOWER DISSIPATION ICC = 4 mA (MAX.) at TA = 25 °C`HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) `OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS `SYMMETRICAL OUTPUT IMPEDANCE |IOH| = IOL = 4 mA (MIN.) `BALANCEDPROPAGATION DELAYS tPLH tPHL` WIDE O...
M74HC86: Features: `HIGH SPEED tPD =12 ns (TYP.) AT VCC =6 V` LOWPOWER DISSIPATION ICC = 4 mA (MAX.) at TA = 25 °C`HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) `OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS `S...
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Symbol | Parameter | Value | Unit |
VCC | Supply Voltage | -0.5 to +7 | V |
VI | DC Input Voltage | -0.5 to VCC + 0.5 | V |
VO | DC Output Voltage | -0.5 to VCC + 0.5 | V |
IIK | DC Input Diode Current | ± 20 | mA |
IOK | DC Output Diode Current | ± 20 | mA |
IO | DC Output Current | ± 25 | mA |
ICC or IGND | DC VCC or Ground Current | ± 50 | mA |
PD | Power Dissipation | 500(*) | mW |
Tstg | Storage Temperature | -65 to +150 | °C |
TL | Lead Temperature (10 sec) | 300 | °C |
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°C to 85°C
The M74HC86 is an high speed CMOS QUAD EXCLUSIVE OR GATE fabricated with silicon gate C2MOS technology. Input and output buffer are installed, which enables high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge and transient excess voltage.