Features: HIGH SPEED: tPD = 13ns (TYP.) at VCC =6VLOW POWER DISSIPATION: ICC =1µA(MAX.) at Vcc =5VLOW ON RESISTANCE: 120Ω TYP. (VCC -VEE = 2V) 50Ω TYP. (VCC -VEE = 4.5V) 35Ω TYP. (VCC -VEE = 9V)WIDE ANALOG INPUT VOLTAGE RANGE ± 6vLOW CROSSTALK BETWEEN SWITCHESFAST SWITCHI...
M74HC4316: Features: HIGH SPEED: tPD = 13ns (TYP.) at VCC =6VLOW POWER DISSIPATION: ICC =1µA(MAX.) at Vcc =5VLOW ON RESISTANCE: 120Ω TYP. (VCC -VEE = 2V) 50Ω TYP. (VCC -VEE = 4.5V) 35Ω...
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Symbol |
Parameter |
Value |
Unit |
VCC |
Supply Voltage |
-0.5 to +7 |
V |
VCC -VEE |
Supply Voltage |
-0.5 to +13 |
V |
VI |
Control Input Voltage |
-0.5 to VCC + 0.5 |
V |
VI/O |
Switch Input/Output Voltage |
VEE -0.5 to VCC + 0.5 |
V |
IOK |
Control Input DC Diode Current |
± 20 |
mA |
IIOK |
I/O DC Diode Current |
± 20 |
mA |
IO |
DC Output Source Sink Current Per Output Pin |
± 25 |
mA |
ICC or IGND |
DC VCC or Ground Current |
± 50 |
mA |
PD |
Power Dissipation |
500(*) |
mW |
Tstg |
Storage Temperature |
-65 to +150 |
°C |
TL |
Lead Temperature (10 sec) |
300 |
°C |
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65 °C; derate to 300mW by 10mW/°C from 65°Cto85°C
The M74HC4316 is an high speed CMOS QUAD BILATERAL SWITCH fabricated with silicon gate C2MOS technology.
M74HC4316 has four independent analogue switches. Each switch has two input/output terminals (nI/O, nO/I) and an active high select input (nC).
When the enable input of M74HC4316 is high, all four analog switches are off. The supply voltage for the digital signals applied to VCC and GND must be whitin
the range 0 to 6 V. The voltage swing on the analogue Inputs/Outputs can be between VCC (positive limit) and VEE (negative limit). The voltage between VCC and VEE must not exceed 12V.
All inputs are equipped with protection circuits against static discharge and transient excess voltage.