M74HC4075M1R

DescriptionThe M74HC4075M1R is an high speed CMOS DUAL D TYPE FLIP FLOP WITH CLEAR fabricated with silicon gate C2MOS technology.All inputs are equipped with protection circuits against static discharge and transient excess voltage.Features of the M74HC4075M1R are:(1)high speed:tPD = 8 ns (TYP.) A...

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SeekIC No. : 004407163 Detail

M74HC4075M1R: DescriptionThe M74HC4075M1R is an high speed CMOS DUAL D TYPE FLIP FLOP WITH CLEAR fabricated with silicon gate C2MOS technology.All inputs are equipped with protection circuits against static disch...

floor Price/Ceiling Price

Part Number:
M74HC4075M1R
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Description

The M74HC4075M1R is an high speed CMOS DUAL D TYPE FLIP FLOP WITH CLEAR fabricated with silicon gate C2MOS technology.All inputs are equipped with protection circuits against static discharge and transient excess voltage.
 
Features of the M74HC4075M1R are:(1)high speed:tPD = 8 ns (TYP.) AT VCC = 5 V;(2) low power dissipation:icc = 1a(max.) at ta=25;(3)high noise immunity:VNIH=VNIL=28%VCC(min.);(4)output drive capability 10 lsttl loads;(5)symmetrical output impedance:|IOH|=IOL=4mA (MIN);(6)balanced propagation delays:tPLH =-tPHL;(7)wide operating voltage range:VCC(OPR)=2V to 6V;(8)pin and function compatible with 4075B.
 
The absolute maximum ratings of the M74HC4075M1R can be summarized as:(1):the symbol is VCC,the parameter is supply voltage,the value -0.5 to +7,the unit is V;(2):the symbol is VI,the parameter is DC input voltage,the value -0.5 to VCC + 0.5,the unit is V;(3):the symbol is VO,the parameter is DC output voltage,the value -0.5 to VCC + 0.5,the unit is V;(4):the symbol is IIK,the parameter is DC input diode current,the value ±20,the unit is mA;(5):the symbol is IOK,the parameter is DC output diode current,the value ±20,the unit is mA;(6):the symbol is IO,the parameter is DC output current,the value ±25,the unit is mA;(7):the symbol is ICC or IGND,the parameter is DC VCC or ground current,the value ±50,the unit is mA;(8):the symbol is PD,the parameter is power dissipation,the value 500,the unit is mW;(9):the symbol is Tstg,the parameter is storage temperature,the value -65 to +150,the unit is ;(10):the symbol is TL,the parameter is lead temperature(10 sec),the value 300,the unit is .




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