Features: HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V LOWPOWER DISSIPATION ICC = 1 mA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE IOH = IOL = 4 mA (MIN.) BALANCEDPROPAGATION DELAYS tPLH = tPHL WIDE OPERATI...
M74HC10: Features: HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V LOWPOWER DISSIPATION ICC = 1 mA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMM...
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Symbol |
Parameter |
Value |
Unit |
VCC |
Supply Voltage |
-0.5 to +7 |
V |
VI |
DC Input Voltage |
-0.5 to VCC + 0.5 |
V |
VO |
DC Output Voltage |
-0.5 to VCC + 0.5 |
V |
IIK |
DC Input Diode Current |
± 20 |
mA |
IOK |
DC Output Diode Current |
± 20 |
mA |
IO |
DC Output Source Sink Current Per Output Pin |
± 25 |
mA |
ICC or IGND |
DC VCC or Ground Current |
± 50 |
mA |
PD |
Power Dissipation |
500 (*) |
mW |
Tstg |
Storage Temperature |
-65 to +150 |
°C |
TL |
Lead Temperature (10 sec) |
300 |
°C |
The M54/74HC10 is a high speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology.
M54/74HC10 has the same high speed performance of LSTTL combined with true CMOS low power consumption.
The internal circuit M54/74HC10 is composed of 3 stages including buffer output, which enables high noise immunity and stable output.
All inputs M54/74HC10 are equipped with protection circuits against static discharge and transient excess voltage.