Features: `HIGH SPEED: tPD = 7ns (TYP.) at VCC = 6V`LOW POWER DISSIPATION: ICC = 1A(MAX.) at TA=25`HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.)`BALANCED PROPAGATION DELAYS: tPLH tPHL`WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V`PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 09PinoutSpecifi...
M74HC09: Features: `HIGH SPEED: tPD = 7ns (TYP.) at VCC = 6V`LOW POWER DISSIPATION: ICC = 1A(MAX.) at TA=25`HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.)`BALANCED PROPAGATION DELAYS: tPLH tPHL`WIDE OPER...
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`HIGH SPEED: tPD = 7ns (TYP.) at VCC = 6V
`LOW POWER DISSIPATION: ICC = 1A(MAX.) at TA=25
`HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.)
`BALANCED PROPAGATION DELAYS: tPLH tPHL
`WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V
`PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 09
Symbol | Parameter | Value | Unit |
VCC | Supply Voltage | -0.5 to +7 | V |
VI | DC Input Voltage | -0.5 to VCC + 0.5 | V |
VO | DC Output Voltage | -0.5 to VCC + 0.5 | V |
IIK | DC Input Diode Current | ± 20 | mA |
IOK | DC Output Diode Current | ± 20 | mA |
IO | DC Output Current | ± 25 | mA |
ICC or IGND | DC VCC or Ground Current | ± 50 | mA |
PD | Power Dissipation | 500 (*) | mW |
Tstg | Storage Temperature | -65 to +150 | |
TL | Lead Temperature (10 sec) | 300 |
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied (*) 500mW at 65 ; derate to 300mW by 10mW/ from 65to 85
he M74HC09 is an high speed CMOS QUAD 2-INPUT OPEN DRAIN AND GATE fabricated with silicon gate C2MOS technology.
The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge and transient excess voltage.